NE3514S02-T1C-A CEL, NE3514S02-T1C-A Datasheet - Page 3

• Manufacturer Part Number: NE3514S02-T1C-A
• Description: HJ-FET NCH 10DB S02
• Manufacturer: CEL

Specifications of NE3514S02-T1C-A

• Transistor Type: HFET
• Frequency: 20GHz
• Gain: 10dB
• Voltage - Rated: 4V
• Current Rating: 70mA
• Noise Figure: 0.75dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Package / Case: S02
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 55 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
250
200
150
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
80
60
40
20
–2.0
0
0
MINIMUM NOISE FIGURE,
0
ASSOCIATED GAIN vs. FREQUENCY
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
5
Gate to Source Voltage V
50
Ambient Temperature T
Frequency f (GHz)
10
Mounted on Glass Epoxy PCB
(1.08 cm
100
G
–1.0
a
15
2
NF
150
× 1.0 mm (t) )
min
20
A
A
GS
V
I
(˚C)
D
= +25°C, unless otherwise specified)
V
DS
200
(V)
= 10 mA
DS
25
= 2 V
= 2 V
Data Sheet PG10593EJ01V0DS
250
30
0
20
18
16
14
12
10
8
6
4
2
0
100
80
60
40
20
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage V
1.0
DS
NE3514S02
V
(V)
GS
–0.2 V
–0.4 V
–0.6 V
= 0 V
2.0
3