ATF-511P8-TR2 Avago Technologies US Inc., ATF-511P8-TR2 Datasheet

IC PHEMT 2GHZ 4.5V 200MA 8-LPCC

ATF-511P8-TR2

Manufacturer Part Number
ATF-511P8-TR2
Description
IC PHEMT 2GHZ 4.5V 200MA 8-LPCC
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF-511P8-TR2

Gain
14.8dB
Transistor Type
pHEMT FET
Frequency
2GHz
Voltage - Rated
7V
Current Rating
1A
Noise Figure
1.4dB
Current - Test
200mA
Voltage - Test
4.5V
Power - Output
30dBm
Package / Case
8-LPCC
Drain Source Voltage Vds
4.5V
Continuous Drain Current Id
1A
Power Dissipation Pd
3W
Noise Figure Typ
1.4dB
Rf Transistor Case
LPCC
No. Of Pins
8
Frequency Max
6GHz
Frequency Min
50MHz
Drain Current Idss Max
200mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATF-511P8-TR2
Manufacturer:
AVAGO
Quantity:
2 220
Part Number:
ATF-511P8-TR2
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Part Number:
ATF-511P8-TR2G
Manufacturer:
AVAGO
Quantity:
10 000
ATF-511P8 High Linearity Enhancement
Mode
2x2 mm
Data Sheet
Description
Avago Technologies’s ATF-511P8 is a single-voltage
high linearity, low noise E-pHEMT housed in an 8-lead
JEDEC-standard leadless plastic chip carrier
(LPCC
linearity, low-noise, medium-power amplifier. Its
operating frequency range is from 50 MHz to 6 GHz.
The thermally efficient package measures only 2 mm
x 2 mm x 0.75 mm. Its backside metalization provides
excellent thermal dissipation as well as visual evi-
dence of solder reflow. The device has a Point MTTF
of over 300 years at a mounting temperature of +85° C.
All devices are 100% RF & DC tested.
Notes:
1. Enhancement mode technology employs a single positive V
2. Refer to reliability datasheet for detailed MTTF data.
3. Conforms to JEDEC reference outline MO229 for DRP-N.
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias
Pin Connections and Package Marking
Pin 1 (Source)
Pin 4 (Source)
Note:
Package marking provides orientation and identification:
“1P” = Device Code
“x” = Date code indicates the month of manufacture.
Pin 7 (Drain)
Pin 2 (Gate)
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
power.
Pin 8
Pin 6
Pin 5
Pin 3
[3]
) package. The device is ideal as a high
[1]
Bottom View
Top View
2
Pseudomorphic HEMT in
1Px
LPCC
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
[3]
Package
gs
,
Features
• Single voltage operation
• High linearity and P1dB
• Low noise figure
• Excellent uniformity in product specifications
• Small package size:
• Point MTTF > 300 years
• MSL-1 and lead-free
• Tape-and-reel packaging option available
Specifications
2 GHz; 4.5V, 200 mA (Typ.)
• 41.7 dBm output IP3
• 30 dBm output power at 1 dB gain compression
• 1.4 dB noise figure
• 14.8 dB gain
• 12.1 dB LFOM
• 69% PAE
Applications
• Front-end LNA Q2 and Q3 driver or pre-driver amplifier for
• Driver amplifier for WLAN, WLL/RLL and MMDS
• General purpose discrete E-pHEMT for other high linearity
Cellular/PCS and WCDMA wireless infrastructure
applications
applications
2.0 x 2.0 x 0.75 mm
[4]
[2]

Related parts for ATF-511P8-TR2

ATF-511P8-TR2 Summary of contents

Page 1

... LPCC Package Data Sheet Description Avago Technologies’s ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier [3] (LPCC ) package. The device is ideal as a high linearity, low-noise, medium-power amplifier. Its operating frequency range is from 50 MHz to 6 GHz. ...

Page 2

... ATF-511P8 Absolute Maximum Ratings Symbol Parameter [2] V Drain–Source Voltage DS [2] V Gate–Source Voltage GS [2] V Gate Drain Voltage GD [2] I Drain Current DS I Gate Current GS [3] P Total Power Dissipation diss [ Input Power in max. T Channel Temperature CH T Storage Temperature STG θ [5] Thermal Resistance ...

Page 3

... ATF-511P8 Electrical Specifications T = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified. A Symbol Parameter and Test Condition Vgs Operational Gate Voltage Vth Threshold Voltage Idss Saturated Drain Current Gm Transconductance Igss Gate Leakage Current [1] NF Noise Figure [1] G Gain ...

Page 4

Ohm 1.2 pF .02 λ RF Input Ohm 2.2 µF Gate DC Supply Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. ...

Page 5

... ATF-511P8 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V 200 4 150 250 350 450 550 I DS (mA) Figure 8. OIP3 vs. I and GHz 4 150 250 350 450 550 I DS (mA) Figure 11. P1dB vs. and V at 900 MHz 4 150 250 350 ...

Page 6

... ATF-511P8 Typical Performance Curves, continued (at 25°C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V, 200 -40 °C 25 °C 85 ° 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 17. P1dB vs. Temp and Freq. ATF-511P8 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal P1dB at 4.5 V, 200 mA ...

Page 7

... ATF-511P8 Typical Performance Curves, continued (at 25°C unless specified otherwise) Tuned for Optimal P1dB at 4.5V, 200 4 150 250 350 450 550 I DS (mA) Figure 26. PAE vs. I and GHz -40 °C 25 ° °C 10 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 29. P1dB vs. Temp and Freq. ...

Page 8

... ATF-511P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.94 -134.9 31.16 0.2 0.93 -157.7 25.64 0.3 0.93 -166.6 22.26 0.4 0.93 -171.8 19.78 0.5 0.92 -173.9 18.70 0.6 0.93 -176.9 17.12 0.7 0.92 -178.8 15.78 0.8 0.93 178.7 14.61 0.9 ...

Page 9

... ATF-511P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.94 -132.6 31.26 0.2 0.93 -156.3 25.79 0.3 0.94 -165.6 22.40 0.4 0.93 -170.8 19.93 0.5 0.92 -173.1 18.84 0.6 0.92 -176.2 17.26 0.7 0.92 -178.2 15.92 0.8 0.92 179.4 14.76 0.9 ...

Page 10

... ATF-511P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.93 -125.4 30.99 0.2 0.93 -152.1 25.70 0.3 0.93 -162.8 22.34 0.4 0.92 -168.7 19.90 0.5 0.91 -170.8 18.78 0.6 0.91 -174.4 17.21 0.7 0.92 -176.8 15.88 0.8 0.92 -179.0 14.72 0.9 ...

Page 11

... ATF-511P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.94 -133.7 30.85 0.2 0.93 -156.9 25.31 0.3 0.93 -165.9 21.89 0.4 0.94 -170.9 19.48 0.5 0.93 -174.5 17.53 0.6 0.93 -175.8 16.77 0.7 0.93 -178.2 15.53 0.8 0.92 179.7 14.28 0.9 ...

Page 12

... ATF-511P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.95 -137.1 29.51 0.2 0.94 -159.0 23.89 0.3 0.94 -167.3 20.46 0.4 0.94 -172.0 18.04 0.5 0.93 -175.3 16.10 0.6 0.93 -176.8 15.36 0.7 0.93 -178.7 14.14 0.8 0.93 179.1 12.87 0.9 ...

Page 13

... Device Models Refer to Avago’s Web Site www.Avagotech.com/view/rf Ordering Information Part Number No. of Devices ATF-511P8-TR1 3000 ATF-511P8-TR2 10000 ATF-511P8-BLK 100 LPCC (JEDEC DFP-N) Package Dimensions D1 pin1 Bottom View Side View DIMENSIONS SYMBOL MIN. NOM. MAX. A 0.70 0.75 0. 0.02 0.05 A2 0.203 REF ...

Page 14

PCB Land Pattern and Stencil Design 2.80 (110.24) 0.70 (27.56) 0.25 (9.84) PIN 1 φ0.20 (7.87) Solder + mask 0.60 (23.62) RF transmission 0.80 (31.50) line 0.15 (5.91) 0.55 (21.65) PCB Land Pattern (top view) Notes: Typical stencil thickness is ...

Page 15

Tape Dimensions 10° Max A 0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH TAPE THICKNESS DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY ...

Page 16

For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright ...

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