ATF-501P8-TR1 Avago Technologies US Inc., ATF-501P8-TR1 Datasheet - Page 19
![IC PHEMT 2GHZ 4.5V 280MA 8-LPCC](/photos/19/9/190993/4532901_sml.jpg)
ATF-501P8-TR1
Manufacturer Part Number
ATF-501P8-TR1
Description
IC PHEMT 2GHZ 4.5V 280MA 8-LPCC
Manufacturer
Avago Technologies US Inc.
Datasheet
1.ATF-501P8-BLK.pdf
(22 pages)
Specifications of ATF-501P8-TR1
Gain
15dB
Transistor Type
pHEMT FET
Frequency
2GHz
Voltage - Rated
7V
Current Rating
1A
Noise Figure
1dB
Current - Test
280mA
Voltage - Test
4.5V
Power - Output
29dBm
Package / Case
8-LPCC
Drain Source Voltage Vds
4.5V
Continuous Drain Current Id
1A
Power Dissipation Pd
3.5W
Noise Figure Typ
1dB
Rf Transistor Case
LPCC
No. Of Pins
8
Frequency Max
6GHz
Frequency Min
50MHz
Drain Current Idss Max
280mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATF-501P8-TR1
Manufacturer:
AVAGO
Quantity:
32 184
Part Number:
ATF-501P8-TR1
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Company:
Part Number:
ATF-501P8-TR1G
Manufacturer:
AVAGO
Quantity:
10 000
ATF-501P8 Typical Scattering Parameters,
Freq.
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
2
2.5
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Figure 64. MSG/MAG & |S21|
5.5V 360mA.
-10
-20
40
30
20
10
0
0
2
Mag.
0.904
0.910
0.912
0.912
0.907
0.909
0.909
0.907
0.909
0.906
0.904
0.904
0.900
0.905
0.900
0.904
0.897
0.902
0.899
0.893
0.886
0.867
0.871
0.854
0.855
0.845
0.842
0.833
0.826
4
FREQUENCY (GHz)
6
S
11
8
Ang.
-132.0
-156.2
-165.4
-170.7
-173.5
-176.1
-178.3
179.9
178.4
176.7
170.5
166.1
165.1
161.0
155.0
144.9
134.8
125.7
115.5
105.9
95.4
85.0
75.0
65.6
56.8
48.1
40.7
32.6
25.5
10
2
vs. Frequency at
12
14
dB
31.8
26.4
23.0
20.5
18.9
17.4
16.0
14.9
13.9
12.9
9.4
7.3
6.8
5.2
3.3
1.1
-0.8
-3.2
-4.3
-5.3
-6.0
-6.8
-8.2
-8.2
-8.9
-9.6
-10.0 0.315
-10.2 0.309
-10.5 0.299
S21
MSG
MAG
16
18
Mag.
38.785 113.0
20.860 100.3
14.161 94.7
10.635 91.2
8.834
7.399
6.337
5.557
4.942
4.429
2.941
2.325
2.191
1.817
1.456
1.130
0.913
0.695
0.609
0.544
0.499
0.455
0.389
0.387
0.360
0.330
S
21
Notes:
1. S parameter is measured on a microstrip
line made on 0.025 inch thick alumina
carrier. The input reference plane is at the
end of the gate lead. The output reference
plane is at the end of the drain lead.
V
Ang.
88.4
86.1
83.9
81.9
80.0
78.0
69.7
63.6
62.2
56.6
48.2
35.7
20.7
7.3
-3.7
-16.0
-23.1
-31.7
-43.4
-49.9
-61.2
-68.7
-72.5
-82.1
-87.9
DS
= 5.5V, I
dB
-39.2 0.011
-38.4 0.012
-37.7 0.013
-37.1 0.014
-36.5 0.015
-35.9 0.016
-35.4 0.017
-35.4 0.017
-34.9 0.018
-34.4 0.019
-32.0 0.025
-30.8 0.029
-30.2 0.031
-29.1 0.035
-27.5 0.042
-24.9 0.057
-23.0 0.071
-22.3 0.077
-20.8 0.091
-19.6 0.105
-18.9 0.114
-17.5 0.133
-17.2 0.138
-15.7 0.164
-15.1 0.176
-14.3 0.192
-14.0 0.199
-13.2 0.220
-12.3 0.242
DS
= 360 mA
Mag.
S
12
Ang.
29.8
24.8
25.5
27.8
30.5
33.4
35.7
37.6
39.7
41.2
46.2
47.9
48.4
48.6
47.4
44.4
36.8
28.9
23.4
13.8
11.7
2.3
-4.6
-11.0
-20.4
-29.6
-36.7
-44.6
-51.8
Mag.
0.619
0.662
0.672
0.675
0.663
0.664
0.666
0.668
0.665
0.665
0.672
0.676
0.675
0.674
0.686
0.680
0.683
0.649
0.643
0.636
0.696
0.743
0.732
0.769
0.805
0.806
0.769
0.792
0.789
S
22
Ang.
-159.9
-170.6
-175.3
-178.2
-179.5
178.9
177.6
176.2
175.5
174.3
170.1
166.5
163.9
160.2
155.1
148.5
146.9
135.8
119.1
117.1
106.1
92.6
89.3
79.4
70.0
66.4
52.1
39.4
29.7
MSG/MAG
dB
35.5
32.4
30.4
28.8
27.7
26.7
25.7
25.1
24.4
23.7
18.4
16.2
15.5
14.0
12.0
9.9
8.0
6.0
4.5
3.1
2.4
1.4
0.0
-0.2
-0.3
-1.3
-2.2
-2.4
-3.1
K
factor
0.198
0.338
0.459
0.571
0.666
0.741
0.808
0.901
0.943
1.008
1.150
1.225
1.254
1.278
1.329
1.267
1.264
1.359
1.402
1.470
1.447
1.439
1.589
1.436
1.323
1.371
1.502
1.436
1.457