BLF7G20L-90P,112 NXP Semiconductors, BLF7G20L-90P,112 Datasheet
BLF7G20L-90P,112
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BLF7G20L-90P,112 Summary of contents
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BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 2 — 17 August 2010 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art ...
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... NXP Semiconductors Integrated ESD protection Good pair match (main and peak on the same chip) Independent control of main and peak bias Internally matched for ease of use Excellent ruggedness Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications High efficiency RF power amplifiers with digital pre-distortion for TD-SCDMA multi carrier applications in the 2010 MHz to 2025 MHz range ...
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... NXP Semiconductors 4. Block diagram Fig 1. 5. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Valid for both main and peak device. Symbol GS(amp)main V GS(amp)peak stg Thermal characteristics Table 5. Symbol R th(j-case) [1] When operated with a 6-carrier TD-SCDMA modulated signal with PAR = 10 0.01 % probability on CCDF ...
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... NXP Semiconductors Table 6. Valid for both main and peak device. Symbol Parameter I GSS DS(on) 8. Application information Table 7. Mode of operation: 6-carrier TD-SCDMA; PAR 10 0.01 % probability on CCDF 2017.5 MHz; RF performance at V unless otherwise specified production circuit. Symbol P L(AV η D PAR ACPR Table 8. Mode of operation: Pulsed CW; ...
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... NXP Semiconductors Fig 2. 8.3 Performance curves Performance curves are measured in a BLD6G21L-50 application circuit. 8.3.1 CW pulsed (dB) 15 (6) (5) (4) 13 (3) (2) ( 170 mA (main 2017.5 MHz; δ ( GS(amp)peak ( 0.2 V GS(amp)peak ( 0.4 V GS(amp)peak ( 0.5 V GS(amp)peak ( 0.6 V GS(amp)peak ( 0.8 V GS(amp)peak Fig 3. Power gain as a function of load power; ...
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... NXP Semiconductors (dB 170 mA (main δ GS(amp)peak ( 2010 MHz ( 2018 MHz ( 2025 MHz Fig 5. Power gain as a function of load power; typical values ( 2010 MHz ( 2018 MHz ( 2025 MHz Fig 7. BLD6G21L-50_BLD6G21LS-50 Product data sheet BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor ...
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... NXP Semiconductors 8.3.2 TD-SCDMA (dB 170 mA (main 2017.5 MHz; 6-carrier TD-SCDMA; PAR = 10 0.01 % probability on CCDF. ( GS(amp)peak ( 0.2 V GS(amp)peak ( 0.4 V GS(amp)peak ( 0.5 V GS(amp)peak ( 0.6 V GS(amp)peak ( 0.8 V GS(amp)peak Fig 8. Power gain as a function of average load power; typical values BLD6G21L-50_BLD6G21LS-50 Product data sheet BLD6G21L-50; BLD6G21LS-50 ...
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... NXP Semiconductors Fig 10. Power gain and drain efficiency as function of peak amplifier gate-source voltage (dB 170 mA (main 6-carrier TD-SCDMA; PAR = 10.8 dB GS(amp)peak at 0.01 % probability on CCDF. ( 2010 MHz ( 2018 MHz ( 2025 MHz Fig 11. Power gain as a function of average load power; typical values BLD6G21L-50_BLD6G21LS-50 Product data sheet BLD6G21L-50 ...
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... NXP Semiconductors 9. Test information V GS(amp)peak BLD6G21-50-V2 C1 Fig 13. Component layout Table 10. See Figure 13 Component C1, C3, C5, C18 C2, C4, C12, C15 C6 C7, C8 C9, C10 C11, C13, C14, C16 C17 C19, C20 C21 L1 [1] American Technical Ceramics type 100B or capacitor of same quality. BLD6G21L-50_BLD6G21LS-50 Product data sheet BLD6G21L-50 ...
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... NXP Semiconductors 10. Package outline Flanged ceramic package; 2 mounting holes; 4 leads Dimensions (1) Unit max 4.65 1.14 5.26 0.18 mm nom min 3.76 0.89 5.00 0.10 max 0.183 0.045 0.207 0.007 inches nom min 0.148 0.035 0.197 0.004 Note 1. millimeter dimensions are derived from the original inch dimensions. ...
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... NXP Semiconductors Earless flanged ceramic package; 4 leads Dimensions (1) Unit max 4.65 1.14 5.26 0.18 mm nom min 3.76 0.89 5.00 0.10 max 0.183 0.045 0.207 0.007 inches nom min 0.148 0.035 0.197 0.004 Note 1. millimeter dimensions are derived from the original inch dimensions. ...
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... NXP Semiconductors 11. Abbreviations Table 11. Acronym CCDF CW LDMOS PAR RF SMD TD-SCDMA VSWR 12. Revision history Table 12. Revision history Document ID BLD6G21L-50_BLD6G21LS-50 v.2 Modifications: BLD6G21L-50_BLD6G21LS-50 v.1 BLD6G21L-50_BLD6G21LS-50 Product data sheet BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Abbreviations Description Complementary Cumulative Distribution Function ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...
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... TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 Application information 8.1 Ruggedness in Doherty operation . . . . . . . . . . 4 8.2 Impedance information . . . . . . . . . . . . . . . . . . . 4 8.3 Performance curves ...