BLF6G22LS-75,112 NXP Semiconductors, BLF6G22LS-75,112 Datasheet - Page 7

• Manufacturer Part Number: BLF6G22LS-75,112
• Description: TRANS BASESTATION 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-75,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 18.7dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 690mA
• Voltage - Test: 28V
• Power - Output: 17W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.24 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 18 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061559112; BLF6G22LS-75; BLF6G22LS-75

NXP Semiconductors
9. Package outline
Fig 8.
BLF6G22LS-75_2
Product data sheet
Earless flanged LDMOST ceramic package; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
Package outline SOT502B
VERSION
OUTLINE
SOT502B
0.186
0.135
4.72
3.43
A
12.83
12.57
0.505
0.495
b
H
0.006
0.003
0.15
0.08
c
U 2
L
A
IEC
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D 1
0.374
0.366
9.50
9.30
All information provided in this document is subject to legal disclaimers.
JEDEC
E
U 1
D 1
D
b
0.375
0.364
9.53
9.25
REFERENCES
E 1
Rev. 02 — 14 April 2010
3
1
2
0.045
0.035
1.14
0.89
0
F
19.94
18.92
0.785
0.745
JEITA
scale
H
w 2
5
D
M
0.210
0.170
F
5.33
4.32
D
10 mm
L
M
0.067
0.057
1.70
1.45
Q
20.70
20.45
0.815
0.805
U 1
0.390
0.380
9.91
9.65
U 2
E 1
BLF6G22LS-75
PROJECTION
0.010
EUROPEAN
0.25
w 2
c
Q
Power LDMOS transistor
E
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
03-01-10
07-05-09
SOT502B
7 of 11