BLF6G27LS-75,118 NXP Semiconductors, BLF6G27LS-75,118 Datasheet - Page 3

• Manufacturer Part Number: BLF6G27LS-75,118
• Description: TRANS WIMAX PWR LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27LS-75,118

• Transistor Type: LDMOS
• Frequency: 2.5GHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 600mA
• Voltage - Test: 28V
• Power - Output: 9W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063217118

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G27-75_6G27LS-75_1
Product data sheet
Table 5.
Table 6.
T
Table 7.
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f
I
[1]
[2]
Symbol
R
Symbol Parameter
V
V
I
I
I
g
R
C
Symbol
G
RL
ACPR
ACPR
P
Dq
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
L(M)
th(j-case)
DS(on)
rs
p
= 25 C per section; unless otherwise specified.
= 600 mA; T
in
Measured within 30 kHz bandwidth.
Measured at 2.7 GHz and 3 dB compression of the CCDF at 0.01 % probability.
885k
1980k
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Thermal characteristics
Characteristics
Application information
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
(885 kHz)
adjacent channel power ratio
(1980 kHz)
peak output power
Parameter
thermal resistance from
junction to case
case
1
= 2500 MHz; f
= 25 C; unless otherwise specified, in a class-AB production circuit.
Rev. 01 — 22 October 2009
BLF6G27-75; BLF6G27LS-75
2
= 2600 MHz; f
Conditions
T
P
case
L
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
= 60 W (CW)
D
GS
DS
GS
GS
DS
GS
DS
GS
GS
= 3.5 A
= 80 C;
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= +11 V; V
= V
= 0 V; V
3
Conditions
P
P
P
P
P
= 2700 MHz; RF performance at V
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
GS(th)
GS(th)
D
= 9 W
= 9 W
= 9 W
= 9 W
= 9 W
DS
D
D
DS
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
= 100 mA
= 5 A
Type
BLF6G27-75
BLF6G27LS-75
DS
= 28 V
= 28 V;
WiMAX power LDMOS transistor
= 0 V
[1]
[1]
[2]
Min
65
1.4
-
14.9
-
-
-
-
Min
15
-
19.0 23
-
-
70
Typ
-
2
-
18
-
7
0.14
1.6
© NXP B.V. 2009. All rights reserved.
Typ
17
75
Typ
0.85
0.75
10
50
60
DS
Max
-
-
-
-
Max
-
2.4
3
-
300
-
0.25
-
45
55
= 28 V;
Unit
K/W
K/W
Unit
dB
dB
%
dBc
dBc
W
3 of 14
Unit
V
V
A
nA
S
pF
A