BLF6G38-100,112 NXP Semiconductors, BLF6G38-100,112 Datasheet

TRANS WIMAX PWR LDMOS SOT502A

BLF6G38-100,112

Manufacturer Part Number
BLF6G38-100,112
Description
TRANS WIMAX PWR LDMOS SOT502A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G38-100,112

Transistor Type
LDMOS
Frequency
3.4GHz
Gain
13dB
Voltage - Rated
65V
Current Rating
34A
Current - Test
1.05A
Voltage - Test
28V
Power - Output
18.5W
Package / Case
SOT502A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061296112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF6G38-100,112
Manufacturer:
Skyworks
Quantity:
1 400
1. Product profile
CAUTION
1.1 General description
1.2 Features
100 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3600 MHz.
Table 1.
Typical RF performance at T
[1]
[2]
I
I
I
I
I
I
I
I
I
I
Mode of operation
1-carrier N-CDMA
BLF6G38-100; BLF6G38LS-100
WiMAX power LDMOS transistor
Rev. 01 — 11 November 2008
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability
on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz
and 3600 MHz, a supply voltage of 28 V and an I
Qualified up to a maximum V
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation
Internally matched for ease of use
Low gold plating thickness on leads
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz.
Measured within 30 kHz bandwidth.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Typical performance
[1]
f
(MHz)
3400 to 3600
case
= 25 C in a class-AB production test circuit.
DS
operation of 32 V
V
(V)
28
DS
P
(W)
18.5
L(AV)
P
(W)
130
L(p)
Dq
G
(dB) (%)
13
of 1050 mA:
p
21.5
D
ACPR
(dBc)
Product data sheet
47.5
[2]
885k
ACPR
(dBc)
65
[2]
1980k

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BLF6G38-100,112 Summary of contents

Page 1

... BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 — 11 November 2008 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical RF performance at T Mode of operation 1-carrier N-CDMA [1] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9 ...

Page 2

... MHz frequency range 2. Pinning information Table 2. Pin BLF6G38-100 (SOT502A BLF6G38LS-100 (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G38-100 BLF6G38LS-100 - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 ...

Page 3

... ACPR adjacent channel power ratio (1980 kHz) 1980k [1] Measured within 30 kHz bandwidth. 7.1 Ruggedness in class-AB operation The BLF6G38-100 and BLF6G38LS-100 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 ...

Page 4

... Zone 0 7.2.2 Graphs 10 EVM (%) 1050 mA 3500 MHz Fig 1. EVM as a function of load power; typical values BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 30 subchannels; P Frame structure FCH 2 symbols 4 subchannels data 2 symbols 26 subchannels data 44 symbols 30 subchannels 001aaj033 G (dB (W) L Fig 2. Rev. 01 — 11 November 2008 ...

Page 5

... Graphs (dB 3400 3450 3500 1050 mA; Single Carrier IS-95 PAR = 9 0.01 % probability. Fig 4. Power gain and drain efficiency as function of frequency; typical values BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 25 ACPR (dBc 001aaj037 25 D (%) ACPR (dBc 3550 3600 f (MHz) (1) Low frequency component (2) High frequency component Fig 5. Rev. 01 — ...

Page 6

... 1050 mA; single carrier IS-95 PAR = 9 0.01 % probability; channel bandwidth = 1.23 MHz. ( 3400 MHz ( 3500 MHz ( 3600 MHz Fig 8. Power gain as a function of load power; typical values BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 001aaj041 40 35 ACPR D (dBc) (%) (W) L(AV) (1) Low frequency component (2) High frequency component Fig 7 ...

Page 7

... C1, C4, C5, C11 C10 L1 R1, R2, R3 Table 10. f (GHz) 3.4 3.5 3.6 BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 BLF6G38-100 Input Rev 2 30RF35 NXP PCB1 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with thickness = 0.76 mm. See Table 9 for list of components. ...

Page 8

... UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 11. Package outline SOT502A BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...

Page 9

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 12. Package outline SOT502B BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...

Page 10

... VSWR WCS WiMAX 11. Revision history Table 12. Revision history Document ID BLF6G38-100_6G38LS-100_1 BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 Abbreviations Description Complementary Cumulative Distribution Function Error Vector Magnitude Frame Control Header Fast Fourier Transform Instantaneous BandWidth Interim Standard 95 Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor ...

Page 11

... For more information, please visit: For sales office addresses, please send an email to: BLF6G38-100_6G38LS-100_1 Product data sheet BLF6G38-100; BLF6G38LS-100 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 12

... NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com WiMAX power LDMOS transistor All rights reserved. Date of release: 11 November 2008 Document identifier: BLF6G38-100_6G38LS-100_1 ...

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