PD85006L-E STMicroelectronics, PD85006L-E Datasheet - Page 6

• Manufacturer Part Number: PD85006L-E
• Description: TRANS RF POWER LDMOST
• Manufacturer: STMicroelectronics

Specifications of PD85006L-E

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 2A
• Current - Test: 200mA
• Voltage - Test: 13.6V
• Power - Output: 5W
• Package / Case: PowerFLAT™ (5 x 5)
• Configuration: Quad Common Source
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: - 0.5 V, + 15 V
• Continuous Drain Current: 2 A
• Power Dissipation: 20.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-8292; 497-8292-2; 497-8292

DC curves
4
6/17
DC curves
Figure 3.
Figure 5.
30
25
20
15
10
5
0
0
2
DC output characteristics
Capacitances vs drain
voltage
4
6
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
VGS=4V
Vdd (V)
8
CRSS
10
COSS
12
14
CISS
16
Figure 4.
ID vs Vgs
ID vs V
GS
PD85006L-E
PD84002