PD85006L-E STMicroelectronics, PD85006L-E Datasheet - Page 6
![TRANS RF POWER LDMOST](/photos/5/64/56489/pd85006l-e_sml.jpg)
PD85006L-E
Manufacturer Part Number
PD85006L-E
Description
TRANS RF POWER LDMOST
Manufacturer
STMicroelectronics
Datasheet
1.PD85006L-E.pdf
(17 pages)
Specifications of PD85006L-E
Transistor Type
LDMOS
Frequency
870MHz
Gain
17dB
Voltage - Rated
40V
Current Rating
2A
Current - Test
200mA
Voltage - Test
13.6V
Power - Output
5W
Package / Case
PowerFLAT™ (5 x 5)
Configuration
Quad Common Source
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
- 0.5 V, + 15 V
Continuous Drain Current
2 A
Power Dissipation
20.8 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Details
Other names
497-8292
497-8292-2
497-8292
497-8292-2
497-8292
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PD85006L-E
Manufacturer:
DIODES
Quantity:
4 000
Part Number:
PD85006L-E
Manufacturer:
ST
Quantity:
20 000
DC curves
4
6/17
DC curves
Figure 3.
Figure 5.
30
25
20
15
10
5
0
0
2
DC output characteristics
Capacitances vs drain
voltage
4
6
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
VGS=4V
Vdd (V)
8
CRSS
10
COSS
12
14
CISS
16
Figure 4.
ID vs Vgs
ID vs V
GS
PD85006L-E
PD84002