PD55008STR-E STMicroelectronics, PD55008STR-E Datasheet - Page 13
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PD55008STR-E
Manufacturer Part Number
PD55008STR-E
Description
IC TRANS RF PWR LDMOST PWRSO-10
Manufacturer
STMicroelectronics
Datasheet
1.PD55008-E.pdf
(25 pages)
Specifications of PD55008STR-E
Transistor Type
LDMOS
Frequency
500MHz
Gain
17dB
Voltage - Rated
40V
Current Rating
4A
Current - Test
150mA
Voltage - Test
12.5V
Power - Output
8W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
4A
Drain Source Voltage (max)
40V
Output Power (max)
8W
Power Gain (typ)@vds
17dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Straight lead)
Pin Count
4
Forward Transconductance (typ)
1.6S
Input Capacitance (typ)@vds
58@12.5VpF
Output Capacitance (typ)@vds
38@12.5VpF
Reverse Capacitance (typ)
2.8@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
52800mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD55008STR-E
Manufacturer:
ST
Quantity:
20 000
PD55008-E, PD55008S-E
6
Circuit layout
Figure 27. Test fixture component layout
Figure 28. Test circuit photomaster
Doc ID 12259 Rev 2
Circuit layout
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