PD85035STR-E STMicroelectronics, PD85035STR-E Datasheet - Page 9
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PD85035STR-E
Manufacturer Part Number
PD85035STR-E
Description
TRANS RF N-CH FET POWERSO-10RF
Manufacturer
STMicroelectronics
Datasheet
1.PD85035-E.pdf
(15 pages)
Specifications of PD85035STR-E
Transistor Type
LDMOS
Frequency
870MHz
Gain
17dB
Voltage - Rated
40V
Current Rating
8A
Current - Test
350mA
Voltage - Test
13.6V
Power - Output
15W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
8A
Drain Source Voltage (max)
40V
Output Power (max)
40W(Typ)
Power Gain (typ)@vds
17dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Straight lead)
Pin Count
4
Input Capacitance (typ)@vds
76@12.5VpF
Output Capacitance (typ)@vds
45@12.5VpF
Reverse Capacitance (typ)
1.4@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
72%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
95000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD85035STR-E
Manufacturer:
ST
Quantity:
20 000
PD85035-E, PD85035S-E
5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at:
www.st.com
Package mechanical data
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