PD85035STR-E STMicroelectronics, PD85035STR-E Datasheet - Page 9

• Manufacturer Part Number: PD85035STR-E
• Description: TRANS RF N-CH FET POWERSO-10RF
• Manufacturer: STMicroelectronics

Specifications of PD85035STR-E

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 8A
• Current - Test: 350mA
• Voltage - Test: 13.6V
• Power - Output: 15W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 8A
• Drain Source Voltage (max): 40V
• Output Power (max): 40W(Typ)
• Power Gain (typ)@vds: 17dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Input Capacitance (typ)@vds: 76@12.5VpF
• Output Capacitance (typ)@vds: 45@12.5VpF
• Reverse Capacitance (typ): 1.4@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 72%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 95000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

PD85035-E, PD85035S-E
5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at:
www.st.com
Package mechanical data
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