PD57060TR-E STMicroelectronics, PD57060TR-E Datasheet - Page 8
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PD57060TR-E
Manufacturer Part Number
PD57060TR-E
Description
IC TRANS RF PWR LDMOST PWRSO-10
Manufacturer
STMicroelectronics
Datasheet
1.PD57060S-E.pdf
(21 pages)
Specifications of PD57060TR-E
Transistor Type
LDMOS
Frequency
945MHz
Gain
14.3dB
Voltage - Rated
65V
Current Rating
7A
Current - Test
100mA
Voltage - Test
28V
Power - Output
60W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
7A
Drain Source Voltage (max)
65V
Output Power (max)
60W(Min)
Power Gain (typ)@vds
14.3dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
3
Forward Transconductance (typ)
2.5(Min)S
Input Capacitance (typ)@vds
83@28VpF
Output Capacitance (typ)@vds
58@28VpF
Reverse Capacitance (typ)
3@28VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
54%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
79000mW
Vswr (max)
5(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PD57060TR-E
Manufacturer:
ST
Quantity:
210
Part Number:
PD57060TR-E
Manufacturer:
ST
Quantity:
20 000
Typical performance
8/21
Figure 11. Drain efficiency vs bias current
Figure 13. Drain efficiency vs supply voltage
Nd (%)
70
60
50
40
30
20
10
Nd (%)
70
60
50
40
30
20
10
10
0
890MHz
960MHz
0.5
15
1
VDS (V)
IDQ (A)
20
925MHz
945MHz
1.5
925MHz
890MHz
25
Pin=32.8dBm
IDQ=100mA
960MHz
Pin=32.8dBm
VDS=28V
2
945MHz
Doc ID 11758 Rev 4
2.5
30
Figure 12. Output power vs supply voltage
Figure 14. Output power vs gate-source
Pout (W)
70
60
50
40
30
20
10
Pout (W)
80
70
60
50
40
30
20
10
10
0
voltage
1
15
2
VDS (V)
VGS (V)
890MHz
20
3
960MHz
925MHz
890MHz
925MHz
25
Pin=32.8dBm
IDQ=100mA
9455MHz
Pin=32.8dBm
VDS=28v
4
945MHz
PD57060-E
960MHz
30
5