ATF-54143-TR1 Avago Technologies US Inc., ATF-54143-TR1 Datasheet - Page 2

• Manufacturer Part Number: ATF-54143-TR1
• Description: IC TRANS E-PHEMT 2GHZ SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-54143-TR1

• Gain: 16.6dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 5V
• Current Rating: 120mA
• Noise Figure: 0.5dB
• Current - Test: 60mA
• Voltage - Test: 3V
• Power - Output: 20.4dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Drain Source Voltage Vds: 3V
• Continuous Drain Current Id: 120mA
• Power Dissipation Pd: 725mW
• Noise Figure Typ: 0.5dB
• Rf Transistor Case: SOT-343
• No. Of Pins: 4
• Frequency Max: 6GHz
• Frequency Min: 450MHz
• Peak Reflow Compatible (260 C): No
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 516-1507-2

ATF-54143 Absolute Maximum Ratings
I
P
P
I
T
T
Product Consistency Distribution Charts
Notes:
6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on
Symbol
V
V
V
θ
2
DS
GS
160
120
Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.
LSL = 33.0, Nominal = 36.575
diss
in max.
CH
STG
jc
80
40
DS
GS
GD
0
between the upper and lower limits.
production test equipment. Circuit losses have been de-embedded from actual measurements.
Figure 1. Typical I-V Curves.
(V
30
120
100
GS
80
60
40
20
0
= 0.1 V per step)
0
32
-3 Std
1
34
OIP3 (dBm)
2
Parameter
Drain - Source Voltage
Gate - Source Voltage
Gate Drain Voltage
Drain Current
Total Power Dissipation
RF Input Power
Gate Source Current
Channel Temperature
Storage Temperature
Thermal Resistance
36
V
3
DS
(V)
38
4
[2]
Cpk = 0.77
Stdev = 1.41
5
40
[2]
[4]
6
[2]
[2]
42
0.7V
0.6V
0.5V
0.4V
0.3V
[3]
7
[1]
[6, 7]
Figure 3. Gain @ 2 GHz, 3 V, 60 mA.
USL = 18.5, LSL = 15, Nominal = 16.6
200
160
120
80
40
0
14
Units
V
V
V
mA
mW
dBm
mA
°C
°C
°C/W
15
-3 Std
16
GAIN (dB)
17
Absolute
Maximum
5
-5 to 1
-5 to 1
120
725
2
150
-65 to 150
162
13
[5]
[5]
Cpk = 1.35
Stdev = 0.4
+3 Std
18
19
Notes:
1. Operation of this device in excess of any one
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate
4. Thermal resistance measured using
5. The device can handle +13 dBm RF Input
160
120
Figure 4. NF @ 2 GHz, 3 V, 60 mA.
USL = 0.9, Nominal = 0.49
80
40
0
of these parameters may cause permanent
damage.
6.2 mW/°C for T
150°C Liquid Crystal Measurement method.
Power provided I
P
application section for additional information.
0.25
1dB
drive level is bias circuit dependent. See
0.45
L
GS
NF (dB)
> 33°C.
is limited to 2 mA. I
0.65
+3 Std
Cpk = 1.67
Stdev = 0.073
0.85
GS
1.05
at