SPF-2086TK Sirenza Microdevices Inc, SPF-2086TK Datasheet

IC TRANS PHEMT 6GHZ SOT-86

SPF-2086TK

Manufacturer Part Number
SPF-2086TK
Description
IC TRANS PHEMT 6GHZ SOT-86
Manufacturer
Sirenza Microdevices Inc
Datasheet
1.SPF-2086TK.pdf (5 pages)

Specifications of SPF-2086TK

Transistor Type
pHEMT FET
Frequency
4GHz
Gain
18.7dB
Voltage - Rated
7V
Current Rating
140mA
Noise Figure
0.5dB
Current - Test
40mA
Voltage - Test
5V
Power - Output
20dBm
Package / Case
SOT-86
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Product Description
Sirenza Microdevices’ SPF-2086TK is a high performance
0.25µm pHEMT Gallium Arsenide FET with Schottky barrier
gates. This 300µm device is ideally biased at 3V,20mA for lowest
noise performance and battery powered requirements. At
5V,40mA the device delivers excellent output TOI of 32 dBm.
It provides ideal performance as driver stages in many
commercial, industrial and military LNA applications.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza
Microdevices product for use in life-support devices and/or systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
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SPF-2086TK Summary of contents

Page 1

... Product Description Sirenza Microdevices’ SPF-2086TK is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent output TOI of 32 dBm. ...

Page 2

... Lead Temperature (pin 4) (° Thermal Resistance (°C/W) TH Noise parameters, at typical operating frequencies REQ REQ 303 S. Technology Court, Broomfield, CO 80021 Absolute Maximum Ratings Bias V =3.0V, I =20mA OPT MIN OPT Bias V =5.0V, I =40mA MIN OPT G OPT Phone: (800) SMI-MMIC 2 SPF-2086TK Low Noise FET < > ...

Page 3

... Typical S-parameters V =3.0V Note : De-embedded to device pins 303 S. Technology Court, Broomfield, CO 80021 Scattering Parameters: = Phone: (800) SMI-MMIC 3 SPF-2086TK Low Noise FET http://www.sirenza.com EDS-101225 Rev ...

Page 4

... Typical S-parameters V =5.0V Note : De-embedded to device pins 303 S. Technology Court, Broomfield, CO 80021 Scattering Parameters: = Phone: (800) SMI-MMIC 4 SPF-2086TK Low Noise FET http://www.sirenza.com EDS-101225 Rev ...

Page 5

... PCB Pad Layout P2T 303 S. Technology Court, Broomfield, CO 80021 The part will be symbolized with the “P2T” designator and a dot signifying pin 1 on the top surface of the package. Package Dimensions P2T Phone: (800) SMI-MMIC 5 SPF-2086TK Low Noise FET Part Number Ordering Information ...

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