MMBFJ309LT1 ON Semiconductor, MMBFJ309LT1 Datasheet
MMBFJ309LT1
Specifications of MMBFJ309LT1
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MMBFJ309LT1 Summary of contents
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... DRAIN 3 SOT−23 (TO−236) CASE 318 1 STYLE 10 2 MARKING DIAGRAM Device Code for MMBFJ309LT1 for MMBFJ310LT1 M = Date Code Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping SOT− ...
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ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage (I = −1.0 mAdc Gate Reverse Current (V = −15 Vdc) GS Gate Reverse Current (V = −15 Vdc Gate Source Cutoff Voltage (V ...
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I Characteristics versus Gate−Source Voltage 100 1.0 k GS(off GS(off) 100 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5 ...
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25° 6 100 200 300 500 f, FREQUENCY (MHz) Figure 4. Common−Gate Y Parameter ...
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... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBFJ309LT1/D ...