J309 ON Semiconductor, J309 Datasheet

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J309

Manufacturer Part Number
J309
Description
TRANS GP JFET N-CH 25V TO-92
Manufacturer
ON Semiconductor
Datasheet

Specifications of J309

Transistor Type
N-Channel JFET
Frequency
100MHz
Gain
16dB
Voltage - Rated
25V
Current Rating
30mA
Current - Test
10mA
Voltage - Test
10V
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Power - Output
-
Noise Figure
-
Other names
J309OS

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J309, J310
JFET VHF/UHF Amplifiers
N−Channel — Depletion
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
MAXIMUM RATINGS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Drain −Source Voltage
Gate −Source Voltage
Forward Gate Current
Total Device Dissipation @ T
Derate above = 25°C
Junction Temperature Range
Storage Temperature Range
Pb−Free Packages are Available*
Rating
Preferred Device
A
= 25°C
Symbol
V
V
T
I
P
T
GF
GS
stg
DS
D
J
−65 to +125
−65 to +150
Value
350
2.8
25
25
10
1
mW/°C
mAdc
Unit
Vdc
Vdc
mW
°C
°C
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(Note: Microdot may be in either location)
ORDERING INFORMATION
GATE
1
J3xx = Device Code
A
Y
WW
G
3
2
MARKING DIAGRAM
3
http://onsemi.com
= Assembly Location
= Year
= Work Week
= Pb−Free Package
xx = 09 or 10
AYWW G
J3xx
2 SOURCE
Publication Order Number:
G
CASE 29−11
1 DRAIN
STYLE 5
TO−92
J309/D

Related parts for J309

J309 Summary of contents

Page 1

... J309, J310 Preferred Device JFET VHF/UHF Amplifiers N−Channel — Depletion Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Drain −Source Voltage Gate −Source Voltage Forward Gate Current Total Device Dissipation @ T = 25°C A Derate above = 25°C Junction Temperature Range Storage Temperature Range Maximum ratings are those values beyond which device damage can occur ...

Page 2

... Gate−Source Capacitance ( −10 Vdc 1.0 MHz FUNCTIONAL CHARACTERISTICS Equivalent Short−Circuit Input Noise Voltage ( Vdc mAdc 100 Hz Pulse Test: Pulse Width v 300 ms, Duty Cycle v 3.0%. J309, J310 (T = 25°C unless otherwise noted) A Symbol V (BR)GSS I V GS(off) J309 J310 I J309 J310 ...

Page 3

... I − GATE−SOURCE VOLTAGE (VOLTS − GATE−SOURCE CUTOFF VOLTAGE (VOLTS) DSS GS Figure 1. Drain Current and Transfer Characteristics versus Gate−Source Voltage J309, J310 Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free ...

Page 4

... 25°C A 130° 0° 100 200 300 500 f, FREQUENCY (MHz) Figure 7. Common−Gate Y Parameter Phase−Angle versus Frequency J309, J310 10 1 7.0 100 4.0 = −2 −5 1.0 1 9.0 Figure 4. On Resistance and Junction Capacitance versus Gate−Source Voltage ...

Page 5

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com J309, J310 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL ...

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