NE68139R-T1 CEL, NE68139R-T1 Datasheet - Page 18

• Manufacturer Part Number: NE68139R-T1
• Description: TRANS NPN 1GHZ SOT-143R
• Manufacturer: CEL

Specifications of NE68139R-T1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2dB @ 1GHz
• Gain: 13.5dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 7mA, 3V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: SOT-143R
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NE68139R-T1TR; NE68139R-TR; NE68139RTR

OUTLINE DIMENSIONS
2.0 ± 0.2
2.0 ± 0.2
1.6 ± 0.1
0.75 ± 0.05
0.9 ± 0.1
0.9 ± 0.1
1.0
1.3
0.65
0.60
0.5
0.6
BASE
(Chip Thickness: 160 mm)
0.65
0.4
0.15
PACKAGE OUTLINE 18
PACKAGE OUTLINE 19
PACKAGE OUTLINE 30
0.3
+0.10
0.2
-0.05
2
+0.1
-
1
NE68100 (CHIP)
0
0.35±0.01
2
1
2
1
0.13
1.6 ± 0.1
0.8 ± 0.1
1.25 ± 0.1
2.1 ± 0.2
1.25 ± 0.1
2.1 ± 0.2
(Units in mm)
0 to 0.1
0 to 0.1
0 to 0.1
EMITTER
0.03φ
3
3
3
4
MARKING
0.65
0.65
0.3
(LEADS 2, 3, 4)
0.02
0.15
0.3
0.15
LEAD 3 ONLY
0.3
+0.10
0.15
(ALL LEADS)
-0.05
0.35±0.01
1.3
+0.10
-0.05
+0.1
-0.05
+0.1
+0.10
-0.05
+0.10
-0.05
-0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0.6
0.6
1.25
RECOMMENDED P.C.B. LAYOUT
RECOMMENDED P.C.B. LAYOUT
RECOMMENDED P.C.B. LAYOUT
1
2
1
2
1
PACKAGE OUTLINE 18
2
PACKAGE OUTLINE 19
PACKAGE OUTLINE 30
0.6
0.8
1.7
1.3
1.7
0.8
3
3
NE681 SERIES
NE681 SERIES
0.5
0.65
3
4
1
0.6
1.3
1.0