AT-41435G Avago Technologies US Inc., AT-41435G Datasheet - Page 2

• Manufacturer Part Number: AT-41435G
• Description: TRANS NPN BIPO 12V 60MA 35-SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-41435G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 4GHz
• Gain: 10dB ~ 18.5dB
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 8V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (35 micro-X)
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 8GHz
• Power Dissipation Pd: 500mW
• Dc Collector Current: 600mA
• Dc Current Gain Hfe: 270
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 1.5V
• Collector Current (dc) (max): 60mA
• Dc Current Gain (min): 30
• Power Dissipation: 500mW
• Frequency (max): 8GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4
• Package Type: Case 35 micro-X
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1856; AT-41435G

AT-41435 Absolute Maximum Ratings
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 5 mW/°C for T
4. Storage above +150°C may tarnish the leads of this package making it difficult to
5. The small spot size of this technique results in a higher, though more accurate
Electrical Specifications, T
Note:
1. For this test, the emitter is grounded.
2
Symbol
|S
P
G
NF
G
f
h
I
I
C
CBO
EBO
T
1 dB
FE
solder into a circuit.
determination of θ
“Thermal Resistance” for more information.
CB
1 dB
A
Symbol
21E
case
O
V
V
V
T
EBO
CBO
CEO
P
I
T
STG
|
C
T
2
j
= 25°C.
Parameters and Test Conditions
Insertion Power Gain; V
Power Output @ 1 dB Gain Compression
V
1 dB Compressed Gain; V
Optimum Noise Figure: V
Gain @ NF
Gain Bandwidth Product: V
Forward Current Transfer Ratio; V
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
CE
= 8 V, I
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
jc
O
C
than do alternate methods. See MEASUREMENTS section
; V
= 25 mA
c
CE
> 100°C.
A
= 8 V, I
= 25°C
C
[2,3]
CE
= 10 mA
EB
CE
CE
= 8 V, I
CB
[4]
CE
= 1 V
[1]
= 8 V, I
= 8 V, I
= 8 V
: V
= 8 V, I
CB
C
CE
= 25 mA
C
C
= 8 V, f = 1 MHz
= 8 V, I
= 25 mA
= 10 mA
C
= 25 mA
C
Units
mW
mA
= 10 mA
°C
°C
V
V
V
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Maximum
-65 to 150
Absolute
500
150
1.5
20
12
60
[1]
Units
dBm
GHz
dB
dB
dB
dB
µA
µA
—
pF
Thermal Resistance
13.0
Min.
θ
30
jc
= 200°C/W
11.5
19.0
18.5
14.0
18.5
14.0
10.0
Typ.
150
6.0
9.5
1.3
1.7
3.0
8.0
0.2
[2,5]
:
Max.
270
2.0
0.2
1.0