Ordering number : EN7689A
CPH6005
Features
Specifications
Absolute Maximum Ratings at Ta=25°C
Electrical Characteristics at Ta=25°C
Marking : GE
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
•
•
•
High f T (f T =1.5GHz typ).
Large current (I C = - -300mA).
Adoption of FBET process.
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Transistor
Video Output Driver, High-Frequency
Amplifier Applications
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
h FE 1
h FE 2
Tstg
Cob
I CP
Cre
P C
I C
Tj
f T
SANYO Semiconductors
When mounted on ceramic substrate (600mm
V CB =- -20V, I E =0A
V EB =--2V, I C =0A
V CE =- -5V, I C =- -50mA
V CE =- -5V, I C =- -300mA
V CE =- -5V, I C =- -100mA
V CB =- -10V, f=1MHz
V CB =- -10V, f=1MHz
CPH6005
Conditions
20608AB TI IM TC-00001188 / 42004 TS IM TA-100888
Conditions
2
✕0.8mm)
DATA SHEET
min
15
5
Ratings
typ
Ratings
1.5
4.9
4.4
Continued on next page.
--55 to +150
max
--300
--600
150
--0.1
--1.0
--30
--20
100
1.0
--3
No.7689-1/3
GHz
Unit
Unit
mA
mA
μA
μA
°C
°C
pF
pF
W
V
V
V