NESG260234-AZ CEL, NESG260234-AZ Datasheet - Page 9

• Manufacturer Part Number: NESG260234-AZ
• Description: TRANS NPN 460MHZ SOT-89
• Manufacturer: CEL

Specifications of NESG260234-AZ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 9.2V
• Power - Max: 1.9W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 100mA, 3V
• Current - Collector (ic) (max): 600mA
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Continuous Collector Current: 600 mA
• Emitter- Base Voltage Vebo: 2.8 V
• Mounting Style: SMD/SMT
• Power Dissipation: 1.9 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Frequency - Transition: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

S-PARAMETERS
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
Remark The graphs indicate nominal characteristics.
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
35
30
25
20
15
10
–5
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
G
V
I
30
25
20
15
10
C (set)
P
CE
5
0
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
10
= 4.5 V, f = 460 MHz
V
f = 460 MHz
= 30 mA
CE
0
= 6 V
I
C
Input Power P
Collector Current I
5
MSG
P
out
10
in
100
MAG
(dBm)
|S
η
21e
C
|
2
C
15
(mA)
Data Sheet PU10547EJ02V0DS
20
500
400
300
200
100
0
1 000
35
30
25
20
15
10
–5
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
G
V
I
C (set)
30
25
20
15
10
CE
P
5
0
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
10
= 6 V, f = 460 MHz
= 30 mA
V
f = 460 MHz
0
CE
I
= 7 V
C
Input Power P
Collector Current I
5
MSG
P
out
10
MAG
in
100
η
(dBm)
|S
C
21e
NESG260234
|
2
C
15
(mA)
20
500
400
300
200
100
0
1 000
7