MMBTH10 Fairchild Semiconductor, MMBTH10 Datasheet - Page 6

• Manufacturer Part Number: MMBTH10
• Description: TRANSISTOR RF NPN SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBTH10

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 650 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 @ 4mA @ 10V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Collector-emitter Voltage: 25V
• Collector-base Voltage: 30V
• Emitter-base Voltage: 3V
• Collector Current (dc) (max): 50mA
• Dc Current Gain (min): 60
• Frequency (max): 650MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBTH10FSTR

Test Circuits
Input
50
- V
ee
RFC
2.2 K
1000 pF
FIGURE 1: Neutralized 200 MHz PG and NF Circuit
1000 pF
(NOTE 2)
2.0 K
FIGURE 2: 500 MHz Oscillator Circuit
L1
1000 pF
V
50 pF
BB
T1
V
CC
1000 pF
5.0-18 pF
(NOTE 1)
RFC
175 pF
1000 pF
0.8-10 pF
2.0 pF
10 K
TUM
680
1000 pF
NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long
NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long
L2
1000 pF
100 pF
0.8-10 pF
V
CC
= 12 V
L1 - L3 turns No. 16 wire, 1/2 inch L x 1/4 inch ID
tapped 1 1/2 turns from cold side
L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID
tapped 1 1/2 turns from cold side
T1 - Pri. 1 turn No. 16 wire
Sec. 1 turn No. 18 wire
500 mHz Output
into 50
NPN RF Transistor
(continued)
3