MMBTH34 Fairchild Semiconductor, MMBTH34 Datasheet
MMBTH34
Manufacturer Part Number
MMBTH34
Description
TRANSISTOR RF NPN SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBTH34.pdf
(3 pages)
Specifications of MMBTH34
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
40V
Frequency - Transition
500MHz
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 20mA, 2V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
500 MHz (Min)
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
4 V
Continuous Collector Current
0.05 A
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
©2003 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is designed for common-emitter low noise amplifier and
• Sourced from process 47.
• See MPSH11 for characteristics.
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width
Thermal Characteristics
* Device mounted on FR-4 PCB 1.6”
V
V
V
I
T
Off Characteristics
V
V
V
I
On Characteristics
h
Small Signal Characteristics
f
P
R
R
C
CBO
T
mixer applications with collector currents in the 100mA to 20mA range
to 300MHz, and low frequency drift common-base VHF oscillator
applications with high output levels for driving FET mixers.
FE
J
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
D
Symbol
, T
JC
JA
Symbol
Symbol
stg
Collector-Emitter Sustaining Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Current Gain Bandwidth Product
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
300 s, Duty Cycle
1.6”
Parameter
0.06"
2.0%
T
A
T
=25 C unless otherwise noted
Parameter
C
=25 C unless otherwise noted
T
Parameter
C
=25 C unless otherwise noted
MMBTH34
- Continuous
I
I
I
V
I
I
f = 100MHz
C
C
E
C
C
CB
= 1.0mA, I
= 100 A, I
= 10 A, I
= 20mA, V
= 15mA, V
= 30V, I
Test Condition
C
E
B
E
CE
CE
= 0
= 0
= 0
= 0
= 2V
= 10V,
1. Base 2. Emitter 3. Collector
Max.
225
556
1.8
-55 ~ +150
Min.
500
4.0
30
40
15
3
Value
4.0
40
40
50
Typ.
1
SOT-23
Mark: 3K
mW/ C
Max.
50
Units
mW
C/W
C/W
2
Units
Rev. A, June 2003
mA
V
V
V
C
Units
MHz
VV
nA
V
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MMBTH34 Summary of contents
Page 1
... Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 1.6” 1.6” 0.06" ©2003 Fairchild Semiconductor Corporation MMBTH34 T =25 C unless otherwise noted C Parameter - Continuous T =25 C unless otherwise noted C Test Condition I = 1.0mA ...
Page 2
... Package Dimensions ©2003 Fairchild Semiconductor Corporation SOT-23 Dimensions in Millimeters Rev. A, June 2003 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...