BF199_D74Z Fairchild Semiconductor, BF199_D74Z Datasheet
BF199_D74Z
Manufacturer Part Number
BF199_D74Z
Description
TRANS RF NPN 25V 50MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.BF199_D74Z.pdf
(3 pages)
Specifications of BF199_D74Z
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
25V
Frequency - Transition
1.1GHz
Power - Max
350mW
Dc Current Gain (hfe) (min) @ Ic, Vce
38 @ 7mA, 10V
Current - Collector (ic) (max)
50mA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
©2002 Fairchild Semiconductor Corporation
NPN RF Transistor
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
* Pulse Test: Pulse Width
Thermal Characteristics
V
V
V
I
T
Off Characteristics
V
V
V
I
On Characteristics
h
V
V
V
Small Signal Characteristics
f
C
P
R
R
C
CES
T
FE
J
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE
BE
BE
D
re
Symbol
Symbol
, T
JC
JA
Symbol
(sat)
(sat)
(on)
STG
Collector-Emitter Breakdown Voltage *
Collector-Base BreakdownVoltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current gain Bandwidth Product
Common-Emitter Ruerse
Transfer Capacitance
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
2.0%
Parameter
T
A
T
=25 C unless otherwise noted
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
- Continuous
BF199
I
I
I
V
I
I
I
I
f = 100MHz
V
C
C
E
I
C
C
C
C
C
CE
CB
= 1.0mA, I
= 10mA, I
= 10mA, I
= 7.0mA, V
= 7.0mA, V
= 100 A, I
= 10 A, I
= 7.0mA, V
= 30V, I
= 10V, I
Test Condition
C
B
B
E
E
B
E
= 0
CE
CE
= 5.0mA
= 5.0mA
= 0
= 0, f = 1.0MHz
CE
= 0
= 0
= 10V
= 10V,
= 10V
Max.
350
125
357
2.8
1. Collector 2. Emitter 3. Base
1
- 55 ~ 150
Value
4.0
25
40
50
Min.
4.0
25
40
38
TO-92
0.925
1100
Max.
0.92
0.2
0.4
50
mW/ C
Units
mW
C/W
C/W
Rev. A, September 2002
Units
mA
V
V
V
Units
MHz
C
nA
pF
V
V
V
V
V
V
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BF199_D74Z Summary of contents
Page 1
... Pulse Test: Pulse Width 300 s, Duty Cycle Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation BF199 T =25 C unless otherwise noted C Parameter - Continuous T =25 C unless otherwise noted C Test Condition I = 1.0mA ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, September 2002 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...