ZUMTS17NTA Diodes Zetex, ZUMTS17NTA Datasheet - Page 3

• Manufacturer Part Number: ZUMTS17NTA
• Description: TRANS RF 3.2GHZ 11V SOT323
• Manufacturer: Diodes Zetex

Specifications of ZUMTS17NTA

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 11V
• Frequency - Transition: 3.2GHz
• Power - Max: 330mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 56 @ 5mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Other names: ZUMTS17NTATR

Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Notes:
ZUMTS17N
Document number: DS32159 Rev. 1 - 2
5.Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
Characteristic
@T
A
= 25°C unless otherwise specified
V
V
V
V
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
I
I
h
C
CBO
EBO
f
FE
T
ob
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3 of 6
Min
1.4
20
11
56
⎯
⎯
⎯
⎯
3
Typ
3.2
0.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
180
0.5
0.5
0.5
1.5
⎯
⎯
⎯
⎯
Diodes Incorporated
A Product Line of
Unit
GHz
μA
μA
pF
⎯
V
V
V
V
I
I
I
V
V
I
I
V
V
C
C
E
C
C
CE
EB
CE
CB
= 10μA
= 10μA
= 1.0mA
= 5mA, V
= 10mA, I
= 10V
= 2V
= 5V, I
= 10V, f = 1.0MHz
E
Test Condition
CE
B
= 25mA, f = 500MHz
= 5mA
= 10V
ZUMTS17N
© Diodes Incorporated
June 2010