AT-30533-TR2G Avago Technologies US Inc., AT-30533-TR2G Datasheet - Page 2
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AT-30533-TR2G
Manufacturer Part Number
AT-30533-TR2G
Description
TRANS NPN BIPO 5.5V 8MA SOT-23
Manufacturer
Avago Technologies US Inc.
Datasheet
1.AT-30533-BLKG.pdf
(11 pages)
Specifications of AT-30533-TR2G
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.5V
Noise Figure (db Typ @ F)
1.1dB ~ 1.4dB @ 900MHz
Gain
11dB ~ 13dB
Power - Max
100mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 1mA, 2.7V
Current - Collector (ic) (max)
8mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT-30533-TR2G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
AT-30511, AT-30533 Absolute Maximum Ratings
Notes:
1. Operation of this device above any one of these parameters may cause permanent
2. T
3. Derate at 1.82 mW/°C for T
Electrical Specifications, T
Notes:
1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a
Compromise Match Between Best Noise Figure, Best Gain, Stability, a Practical,
Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and
AT-310 Geometries.
W = 10 L = 1000
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
DIMENSIONS IN MILS
Symbol
Symbol
damage.
Input loss = 0.4 dB; output loss = 0.4 dB.
Input loss = 0.4 dB; output loss = 0.4 dB.
1000 pF
Mounting Surface
V
V
V
T
I
I
h
NF
G
P
CBO
EBO
CBO
CEO
EBO
I
T
STG
FE
C
T
A
j
V
BB
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Noise Figure
V
Associated Gain
V
Forward Current
Transfer Ratio
Collector Cutoff Current
Emitter Cutoff Current
W = 10 L = 1860
CE
CE
= 25°C.
= 2.7 V, I
= 2.7 V, I
Parameters and Test Conditions
Parameter
W = 30 L = 100
C
C
C
> 95°C.
= 1 mA
= 1 mA
[2] [3]
A
TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2
= 25
W = 30 L = 100
Units Absolute Maximum
mW
mA
°C
°C
V
V
V
°
NOT TO SCALE
C
f = 0.9 GHz
f = 0.9 GHz
W = 10 L = 1860
V
CE
I
V
V
C
CB
EB
= 1 mA
= 2.7 V
= 3 V
= 1 V
-65 to 150
V
100
150
1.5
5.5
CC
11
8
Units
µA
µA
dB
dB
W = 10 L = 1025
-
25 Ω
1000 pF
Min
14
70
[1]
[1]
AT-30511
1.1
Typ
16
0.03
0.1
[1]
[1]
2
Thermal Resistance
Max
1.4
300
0.2
1.5
θ
[1]
jc
= 550°C/W
Min
11
70
[2]
AT-30533
1.1
Typ
13
0.03
0.1
[2]
[2]
[2]
Max
1.4
300
:
0.2
1.5
[2]