NE851M13-T3-A CEL, NE851M13-T3-A Datasheet - Page 5

• Manufacturer Part Number: NE851M13-T3-A
• Description: TRANS NPN LOW PRO M13 SMD
• Manufacturer: CEL

Specifications of NE851M13-T3-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2.5dB @ 2GHz
• Power - Max: 140mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M13
• Dc Current Gain Hfe Max: 145
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.1 A
• Power Dissipation: 140 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q2628423

TYPICAL PERFORMANCE CURVES
-10
-15
25
20
15
10
-5
5
0
6
5
4
3
2
1
0
6
5
4
3
2
1
0
-20
NOISE FIGURE and ASSOCIATED GAIN
NOISE FIGURE and ASSOCIATED GAIN
1
1
V
f = 2 GHz
V
f = 1 GHz
V
I
cq
CE
CE
CE
= 5 mA (RF OFF)
= 1 V
= 1 V
COLLECTOR CURRENT vs.
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
= 2 V, f = 1 GHz
-15
Collector Current, I
Collector Current, I
OUTPUT POWER AND
Input Power, P
INPUT POWER
-10
P
out
10
10
-5
NF
G
NF
G
IN
a
a
I
C
(dBm)
C
C
0
(mA)
(mA)
5
100
100
10
18
15
12
9
6
3
0
18
15
12
9
6
3
0
80
70
60
50
40
30
20
10
0
(T
A
= 25°C)
-10
-15
25
20
15
10
-5
6
5
4
3
2
1
0
6
5
4
3
2
1
0
5
0
NOISE FIGURE and ASSOCIATED GAIN
-20
NOISE FIGURE and ASSOCIATED GAIN
1
1
V
V
I
f = 1 GHz
V
f = 2 GHz
cq
CE
CE
CE
= 5 mA (RF OFF)
vs. COLLECTOR CURRENT
-15
vs. COLLECTOR CURRENT
= 2 V
COLLECTOR CURRENT vs.
= 2 V, f = 2 GHz
= 2 V
Collector Current, I
OUTPUT POWER AND
Collector Current, I
Input Power, P
INPUT POWER
-10
P
out
10
10
-5
G
NF
G
a
I
NF
C
a
IN
(dBm)
C
0
C
(mA)
(mA)
5
NE851M13
100
100
10
19
15
12
9
6
3
0
18
15
12
9
6
3
0
80
70
60
50
40
30
20
10
0