NE678M04-T2-A CEL, NE678M04-T2-A Datasheet - Page 4

• Manufacturer Part Number: NE678M04-T2-A
• Description: TRANSISTOR NPN 1.8GHZ M04
• Manufacturer: CEL

Specifications of NE678M04-T2-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (db Typ @ F): 1.7dB ~ 2.5dB @ 2GHz
• Gain: 13.5dB
• Power - Max: 205mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 30mA, 3V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.1 A
• Power Dissipation: 205 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NE678M04
TYPICAL PERFORMANCE CURVES
10
25
20
15
10
10
10
25
25
20
20
15
15
25
20
15
5
0
5
5
0
0
-10
5
0
-10
-10
-10
COLLECTOR CURRENT, COLLECTOR
COLLECTOR CURRENT, COLLECTOR
COLLECTOR CURRENT, COLLECTOR
V
f = 0.9 GHz
I
V
V
f = 1.8 GHz
f = 1.8 GHz
I
I
V
f = 2.4 GHz
I
cq
cq
cq
cq
CE
CE
CE
CE
= 10 mA (RF OFF)
= 10 mA (RF OFF)
= 10 mA (RF OFF)
= 10 mA (RF OFF)
OUTPUT POWER, POWER GAIN,
OUTPUT POWER, POWER GAIN,
OUTPUT POWER, POWER GAIN,
EFFICIENCY vs. INPUT POWER
EFFICIENCY vs. INPUT POWER
EFFICIENCY vs. INPUT POWER
= 3.2 V
= 2.8 V
= 2.8 V
= 3.2 V
-5
-5
-5
-5
Input Power P
Input Power P
Input Power P
0
0
0
0
P
P
G
G
P
η
η
G
η
I
I
I
out
out
C
C
out
C
P
P
C
C
C
P
in
in
in
5
5
5
5
(dBm)
(dBm)
(dBm)
P
G
η
I
out
C
C
P
10
10
10
10
15
15
15
15
250
200
150
100
50
0
250
250
200
200
150
150
100
100
50
50
0
0
250
200
150
100
50
0
(T
A
= 25 °C)
10
25
20
15
5
0
-10
V
f = 1.8 GHz
I
COLLECTOR CURRENT, COLLECTOR
cq
CE
= 10 mA (RF OFF)
OUTPUT POWER, POWER GAIN,
= 3.2 V
EFFICIENCY vs. INPUT POWER
-5
Input Power P
0
P
G
η
I
out
C
C
P
in
5
(dBm)
10
15
250
200
150
100
50
0