NE68819-A CEL, NE68819-A Datasheet - Page 3

• Manufacturer Part Number: NE68819-A
• Description: TRANSISTOR NPN 2GHZ SC-90
• Manufacturer: CEL

Specifications of NE68819-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.7dB ~ 2.5dB @ 2GHz
• Power - Max: 125mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 3mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: 3-XSOF, MiniMold
• Dc Collector/base Gain Hfe Min: 70
• Dc Current Gain Hfe Max: 140
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.125 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
INSERTION GAIN vs. COLLECTOR CURRENT
0.05
0.02
0.01
100
0.5
100
0.2
0.1
200
50
20
10
5
2
4
0
1
8
6
2
0
0.1 0.2
1
0
V
V
CE
f = 2 GHz
CE
Base to Emitter Voltage, V
BASE TO EMITTER VOLTAGE
= 1 V
= 1 V
2
COLLECTOR CURRENT vs.
D.C. CURRENT GAIN vs.
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
0.5
5
1
NE68833
2
10
0.5
5
20
C
10
C
V
V
CE
CE
(mA)
(mA)
20
= 3 V
= 1 V
BE
50
(V)
50
100
100
1
(TA = 25°C)
0.5
1.0
0.1
NOISE FIGURE vs. COLLECTOR CURRENT
10
8
6
2
5
4
0
4
2
3
0
1
1
1
1
f = 2 GHz
COLLECTOR TO BASE VOLTAGE
f = 2 GHz
FEED-BACK CAPACITANCE vs.
Collector to Base Voltage, V
GAIN BANDWIDTH PRODUCT
2
vs. COLLECTOR CURRENT
2
Collector Current, I
Collector Current, I
5
5
NE68833
NE68839
NE68830
10
10
5
V
CE
20
20
C
C
= 3 V
V
V
(mA)
V
(mA)
CE
CE
CE
10
= 3 V
CB
= 1 V
f = 1 MHz
= 1 V
50
50
(V)
100
100
20