NE68039-T1-A CEL, NE68039-T1-A Datasheet
NE68039-T1-A
Specifications of NE68039-T1-A
Related parts for NE68039-T1-A
NE68039-T1-A Summary of contents
Page 1
... GHz 2 GHz • HIGH ASSOCIATED GAIN: 12 GHz 8 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is de- signed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications GHz ...
Page 2
... TYP MAX 10 1.7 1.9 13.5 9.6 18.5 11.8 7.3 15 9.2 4.4 160 1.0 1.0 0.3 0.7 100 1000 200 NE68039/39R 2SC4095 39 10 1.7 2.5 2.6 11 6.5 18 12.4 8.7 14.5 9.6 4.9 50 100 250 1.0 1.0 0.25 0.8 200 620 200 ...
Page 3
... A UNITS RATINGS 1 °C 150 2 °C -65 to +150 (T = 25° GHz GHz GHz 50 70 100 (mA POWER DERATING CURVES 400 300 NE68035 NE68033 NE68039 200 NE68019 100 0 50 100 150 0 Ambient Temperature, T (°C) A NE68033 INSERTION GAIN vs. COLLECTOR CURRENT GHz 10 NE68033 100 Collector Current, I ...
Page 4
TYPICAL PERFORMANCE CURVES FORWARD CURRENT GAIN vs. COLLECTOR CURRENT 500 300 200 100 Collector Current NE68035 NOISE FIGURE vs. COLLECTOR CURRENT GHz ...
Page 5
... 0.22 500 86 0.18 1000 103 0.12 2000 3000 16 0.50 4000 30 0.36 NE68039 39 0.33 58 0.30 TYPICAL NOISE PARAMETERS 77 0.27 FREQ. 88 0.23 (MHz) 103 0. 2 500 (T = 25°C) 800 A 1000 1500 ANG Rn/50 2000 ...
Page 6
TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1 0.1 GHz GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68018 V = 2.5 ...
Page 7
TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1.5 2 0.1 GHz -. GHz -.4 -.6 -1.5 -.8 -1 NE68019 V = 2.5 V, ...
Page 8
TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 0.1 GHz S 11 -.2 5 GHz -.4 -.6 -1.5 -.8 -1 NE68030 V ...
Page 9
TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz S 11 -.2 5 GHz -.4 -.6 -1.5 -.8 -1 NE68033 ...
Page 10
TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1 0.1 GHz -. -.4 5 GHz -.6 -1.5 -.8 -1 NE68035 ...
Page 11
... TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1 0.1 GHz 6 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68039 FREQUENCY S 11 (MHz) MAG ANG 50 0.935 -5.8 100 0.903 -15.3 200 0.826 -26.3 300 0.770 -38.7 400 0.690 -49.6 500 0.618 -58.1 600 0.545 -67.5 800 ...
Page 12
NE68018 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR ...
Page 13
NE68019 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR ...
Page 14
NE68030 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR ...
Page 15
... RBM 1.02 KF IRB 4.01e 10.5 CJE 0.358e-12 VJE 0.71 MJE 0.5 CJC 0.162e-12 VJC 0.79 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. C CBPKG BEPKG L EX Emitter UNITS (1) Parameter ...
Page 16
NE68035 NONLINEAR MODEL SCHEMATIC RB_PKG BASE 0.1 ohms CBEX_PKG 0.1pF BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. ...
Page 17
OUTLINE DIMENSIONS (Units in mm) NE68000 (CHIP) (Chip Thickness: 160 μm) 0.35 0.01 0.13 BASE EMITTER 30 PACKAGE OUTLINE 18 2.1 ± 0.2 1.25 ± 0 2.0 ± 0.2 0.65 0.65 0.60 0. +0.10 0.4 -0.05 ...
Page 18
OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 33 (SOT-23) +0.2 2.8 -0.3 2 2.9 ± 0.2 0.95 1 +0.2 1.5 -0.1 1.1 to 1.4 0 0.1 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 2 ...
Page 19
... NE68030-T1-A 3000 1 NE68033-T1B-A 3000 1 NE68035 1 NE68039-T1-A 3000 1 NE68039R-T1 3000 Note: 1. Lead material: Cu Lead plating: SnBi – 2.5%Bi Typ. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury ...
Page 20
...