NESG2021M05-T1-A CEL, NESG2021M05-T1-A Datasheet - Page 4

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NESG2021M05-T1-A

Manufacturer Part Number
NESG2021M05-T1-A
Description
TRANS NPN 2GHZ M05
Manufacturer
CEL
Datasheet

Specifications of NESG2021M05-T1-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Frequency - Transition
25GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
Gain
10dB ~ 18dB
Power - Max
175mW
Dc Current Gain (hfe) (min) @ Ic, Vce
130 @ 5mA, 2V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
M05
Mounting Style
SMD/SMT
Power Dissipation
175 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NESG2021M05-T1-A
Manufacturer:
TI
Quantity:
7
Part Number:
NESG2021M05-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
TYPICAL PERFORMANCE CURVES
30
25
20
15
10
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
5
0
0.1
0.1
1
INSERTION POWER GAIN, MAG, MSG
INSERTION POWER GAIN, MAG, MSG
V
f = 2 GHz
CE
= 2 V
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
|S
Collector Current, l
MSG
21e
vs. FREQUENCY
|S
vs. FREQUENCY
MSG
Frequency, f (GHz)
Frequency, f (GHz)
21e
|
1
1
2
|
2
10
MAG
MAG
10
10
C
(mA)
V
I
V
I
C
C
CE
CE =
= 10 mA
= 10 mA
= 3 V
1 V
100
100
100
(T
A
= 25°C)
30
25
20
15
10
40
35
30
25
20
15
10
30
25
20
15
10
5
0
5
0
5
0
0.1
1
1
V
f = 1 GHz
V
f = 2 GHz
INSERTION POWER GAIN, MAG, MSG
CE
CE
INSERTION POWER GAIN, MAG,
= 1 V
= 3 V
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, l
Collector Current, I
MSG vs. FREQUENCY
|S
MSG
21e
Frequency, f (GHz)
1
|
2
MSG
10
10
|S
MAG
21e
|
2
10
MAG
C
C
(mA)
(mA)
V
I
C
CE
= 10 mA
= 2 V
100
100
100

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