NE856M03-A CEL, NE856M03-A Datasheet - Page 2

• Manufacturer Part Number: NE856M03-A
• Description: TRANSISTOR NPN 1GHZ SC-90
• Manufacturer: CEL

Specifications of NE856M03-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 2.5dB @ 1GHz
• Power - Max: 125mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 7mA, 3V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: 3-XSOF, MiniMold
• Dc Collector/base Gain Hfe Min: 145
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 4 GHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.125 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NONLINEAR MODEL
SCHEMATIC
NE856M03
BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
ISC
IRB
IKF
ISE
VJC
BR
NR
IKR
NC
RE
RB
RC
BF
NF
NE
IS
3.32e-11
9.2e-16
4.89e-9
2.8e-12
1.1e-12
110.3
10.08
1.01
4.37
0.03
0.33
1.26
0.05
6.63
3.95
1.0
1.3
0.5
0.7
Q1
18
1
8
2
Parameters
Base
XCJC
MJC
MJS
CJS
VJS
PTF
XTB
XTF
VTF
EG
FC
TF
ITF
XTI
KF
TR
AF
L
BX
1.56e-18
4e-12
0.55
0.75
0.69
0.06
1e-9
1.11
1.49
L
Q1
0.3
0.5
30
B
0
0
0
0
3
(1)
C
C
CBPKG
CB
Emitter
L
L
E
EX
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
C
CE
Parameter
time
capacitance
inductance
resistance
voltage
current
C
CEPKG
Q1
Parameters
C
C
L
L
C
C
L
L
L
L
B
E
BX
CX
EX
CX
CB
CE
CBPKG
CEPKG
0.1 to 4.0 GHz
V
11/98
CE
= 0.5 V to 10 V, I
Collector
C
= 0.5 mA to 10 mA
0.087e-12
0.16e-12
0.5e-9
0.6e-9
0.08e-12
0.08e-12
0.12e-9
0.10e-9
0.12e-9
856M03
seconds
farads
henries
ohms
volts
amps
Units