NESG260234-T1-AZ CEL, NESG260234-T1-AZ Datasheet - Page 6

• Manufacturer Part Number: NESG260234-T1-AZ
• Description: TRANS NPN 460MHZ SOT-89
• Manufacturer: CEL

Specifications of NESG260234-T1-AZ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 9.2V
• Power - Max: 1.9W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 100mA, 3V
• Current - Collector (ic) (max): 600mA
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Continuous Collector Current: 600 mA
• Emitter- Base Voltage Vebo: 2.8 V
• Mounting Style: SMD/SMT
• Power Dissipation: 1.9 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Frequency - Transition: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
4
0.0001
0.0001
0.001
1 000
0.001
1 000
0.01
0.01
100
100
0.1
0.1
2.0
1.6
1.2
0.8
0.4
10
10
Remark The graphs indicate nominal characteristics.
1
1
0
0.4
0.4
V
V
Nature Neglect
CE
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
= 3 V
= 6 V
25
0.5
0.5
Base to Emitter Voltage V
Base to Emitter Voltage V
Ambient Temperature T
50
0.6
0.6
Mounted on glass epoxy PWB
(34.2 cm
75
0.7
0.7
2
100
× 0.8 mm (t) )
0.8
0.8
125
A
A
BE
BE
(˚C)
= +25°C, unless otherwise specified)
(V)
(V)
0.9
0.9
150
Data Sheet PU10547EJ02V0DS
175
1.0
1.0
0.0001
0.0001
0.001
1 000
1 000
0.001
0.01
0.01
100
100
1.4
0.8
0.4
1.6
1.2
1.0
0.6
0.2
0.1
0.1
10
10
0
1
1
0.4
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
V
CE
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
= 5 V
= 7 V
0.5
0.5
Collector to Base Voltage V
Base to Emitter Voltage V
Base to Emitter Voltage V
2
0.6
0.6
4
0.7
0.7
6
0.8
0.8
NESG260234
BE
BE
CB
f = 1 MHz
(V)
(V)
8
(V)
0.9
0.9
1.0
1.0
10