NE68130-A CEL, NE68130-A Datasheet - Page 18

• Manufacturer Part Number: NE68130-A
• Description: TRANSISTOR NPN 1GHZ SOT-323
• Manufacturer: CEL

Specifications of NE68130-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 7GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 1.6dB @ 1GHz ~ 2GHz
• Gain: 9dB ~ 13.5dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 7mA, 3V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: SOT-323
• Dc Collector/base Gain Hfe Min: 40
• Dc Current Gain Hfe Max: 240
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.065 A
• Power Dissipation: 0.150 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

OUTLINE DIMENSIONS
2.0 ± 0.2
2.0 ± 0.2
1.6 ± 0.1
0.75 ± 0.05
0.9 ± 0.1
0.9 ± 0.1
1.0
1.3
0.65
0.60
0.5
0.6
BASE
(Chip Thickness: 160 mm)
0.65
0.4
0.15
PACKAGE OUTLINE 18
PACKAGE OUTLINE 19
PACKAGE OUTLINE 30
0.3
+0.10
0.2
-0.05
2
+0.1
-
1
NE68100 (CHIP)
0
0.35±0.01
2
1
2
1
0.13
1.6 ± 0.1
0.8 ± 0.1
1.25 ± 0.1
2.1 ± 0.2
1.25 ± 0.1
2.1 ± 0.2
(Units in mm)
0 to 0.1
0 to 0.1
0 to 0.1
EMITTER
0.03φ
3
3
3
4
MARKING
0.65
0.65
0.3
(LEADS 2, 3, 4)
0.02
0.15
0.3
0.15
LEAD 3 ONLY
0.3
+0.10
0.15
(ALL LEADS)
-0.05
0.35±0.01
1.3
+0.10
-0.05
+0.1
-0.05
+0.1
+0.10
-0.05
+0.10
-0.05
-0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0.6
0.6
1.25
RECOMMENDED P.C.B. LAYOUT
RECOMMENDED P.C.B. LAYOUT
RECOMMENDED P.C.B. LAYOUT
1
2
1
2
1
PACKAGE OUTLINE 18
2
PACKAGE OUTLINE 19
PACKAGE OUTLINE 30
0.6
0.8
1.7
1.3
1.7
0.8
3
3
NE681 SERIES
NE681 SERIES
0.5
0.65
3
4
1
0.6
1.3
1.0