NE68530-A CEL, NE68530-A Datasheet - Page 11

• Manufacturer Part Number: NE68530-A
• Description: TRANSISTOR NPN 2GHZ SOT-323
• Manufacturer: CEL

Specifications of NE68530-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 2GHz
• Gain: 7dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 10mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BJT NONLINEAR MODEL PARAMETERS
SCHEMATIC
(1) Gummel-Poon Model
NE68519 NONLINEAR MODEL
Parameters
RBM
VAR
VJC
VJE
MJE
IKR
ISC
IRB
CJE
CJC
NR
NC
RC
BF
VAF
IKF
ISE
RB
NF
NE
BR
RE
IS
7.90e-13
0.18e-12
7.0e-16
0.4e-12
Infinity
0.009
0.19
2.19
1.08
12.4
8.34
0.81
0.75
Q1
1.3
0.5
109
15
10
10
1
1
0
2
Parameters
XCJC
Base
MJC
MJS
XTB
CJS
VJS
PTF
XTF
VTF
EG
FC
XTI
TF
ITF
KF
TR
AF
L
BX
2.0e-12
1.0e-9
0.011
0.34
0.75
4.58
1.11
L
0.5
5.2
Q1
B
0
0
0
0
0
3
0
1
(1)
C
C
CBPKG
CB
Emitter
L
L
E
EX
UNITS
ADDITIONAL PARAMETERS
C
MODEL RANGE
Frequency:
Bias:
CE
C
Q1
CEPKG
L
Parameter
time
capacitance
inductance
resistance
voltage
current
CX
Parameters
C
C
L
L
C
C
L
L
L
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
0.05 to 3.0 GHz
V
CE
= 0.5 V to 3.0 V, I
Collector
C
= 0.5 mA to 20 mA
0.13e-12
0.14e-12
0.9e-9
0.9e-9
0.17e-12
0.21e-12
0.19e-9
0.19e-9
0.19e-9
68519
NE685 SERIES
seconds
farads
henries
ohms
volts
amps
Units