NE685M03-A CEL, NE685M03-A Datasheet - Page 2

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NE685M03-A

Manufacturer Part Number
NE685M03-A
Description
TRANSISTOR NPN 2GHZ SC-90
Manufacturer
CEL
Datasheet

Specifications of NE685M03-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Frequency - Transition
12GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.5dB @ 2GHz
Power - Max
125mW
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 10mA, 3V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
3-XSOF, MiniMold
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.03 A
Power Dissipation
125 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
TYPICAL PERFORMANCE CURVES
ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these parameters may result
ORDERING INFORMATION
PART NUMBER
NE685M03-A
NE685M03-T1-A
SYMBOLS
in permanent damage.
V
V
V
T
P
CBO
CEO
EBO
T
STG
I
C
T
J
30
26
22
18
14
10
6
2
0
COLLECTOR TO EMITTER VOLTAGE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector to Emitter Voltage, V
COLLECTOR CURRENT vs.
PARAMETERS
1.0
QUANTITY
2.0
3.0
4.0
UNITS
mW
mA
°C
°C
5.0
CE
V
V
V
(V)
1
6.0
(T
-65 to +150
RATINGS
A
(T
= 25°C)
125
150
30
9
5
2
A
= 25°C)
150
140
130
120
100
110
0
D.C. FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
6
Collector Current, I
12
18
C
(mA)
24
30

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