NE52418-T1-A CEL, NE52418-T1-A Datasheet - Page 5

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NE52418-T1-A

Manufacturer Part Number
NE52418-T1-A
Description
IC AMP HBT GAAS LN 4-SMINI
Manufacturer
CEL
Datasheet

Specifications of NE52418-T1-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Noise Figure (db Typ @ F)
1dB ~ 1.5dB @ 2GHz
Gain
14dB ~ 16dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 3mA, 2V
Current - Collector (ic) (max)
40mA
Mounting Type
Surface Mount
Package / Case
S-Mini 4P
Mounting Style
SMD/SMT
Continuous Drain Current
30 mA
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
BJT NONLINEAR MODEL PARAMETERS
NE52418
SCHEMATIC
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
NONLINEAR MODEL
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
VAF
CJE
VJE
CJC
VJC
IKR
ISC
IRB
IKF
ISE
NE
BR
NR
RE
RB
BF
NF
NC
RC
IS
0.065e-12
6.36e-18
7.8e-25
1.006
1000
1000
1000
1000
1.95
1.92
0.27
0.99
0.21
0.73
158
Q1
2.0
1.5
1.2
1
1
0
7
1
Parameters
XCJC
MJC
MJS
CJS
VJS
XTF
VTF
PTF
XTB
XTI
ITF
EG
FC
TR
KF
TF
AF
2.0 ± 0.2
0.9 ± 0.1
50e-12
2e-12
0.65
0.60
0.07
0.75
0.05
1.51
0.2
0.5
Q1
0
0
3
1
0
0
3
0
1
0.4
0.3
+0.10
-0.05
2
1
(1)
1.25 ± 0.1
2.1 ± 0.2
0 to 0.1
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
3
4
Parameters
0.65
0.65
C
C
L
L
L
C
C
C
L
L
L
B
C
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPK
0.3
(LEADS 2, 3, 4)
0.3 to 10 GHz
V
02/2002
0.15
CE
+0.10
-0.05
1.3
= 0.7 V to 2 V, I
+0.10
-0.05
0.02e-12
0.19e-12
0.83e-9
0.8e-9
0.2e-9
0.002e-12
0.05e-12
0.15e-12
0.55e-9
0.1e-9
0.05e-9
NE52418
C
= 1 mA to 10 mA
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
04/22/03

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