NE677M04-A CEL, NE677M04-A Datasheet

NE677M04-A

Manufacturer Part Number

NE677M04-A

Description

TRANSISTOR NPN 1.8GHZ M04

Manufacturer

CEL

Datasheet

1.NE677M04-T2-A.pdf (8 pages)

Specifications of NE677M04-A

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

Frequency - Transition

15GHz

Noise Figure (db Typ @ F)

1.7dB ~ 2.5dB @ 2GHz

Gain

16dB

Power - Max

205mW

Dc Current Gain (hfe) (min) @ Ic, Vce

75 @ 20mA, 3V

Current - Collector (ic) (max)

50mA

Mounting Type

Surface Mount

Package / Case

M04

Mounting Style

SMD/SMT

Configuration

Single

Transistor Polarity

NPN

Continuous Collector Current

0.05 A

Power Dissipation

205 mW

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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• HIGH GAIN BANDWIDTH:

• HIGH OUTPUT POWER:

• HIGH LINEAR GAIN:

• NEW LOW PROFILE M04 PACKAGE:

ELECTRICAL CHARACTERISTICS

Notes:

1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the

3. Electronic Industrail Association of Japan

FEATURES

DESCRIPTION

NEC's NE677M04 is fabricated using NEC's HFT3 wafer

process. With a transition frequency of 15 GHz, the NE677M04

is usable in applications from 100 MHz to 3 GHz. The NE677M04

provides P1dB of 15 dBm, even with low voltage and low

current, making this device an excellent choice for the driver

stage for mobile or fixed wireless applications.

NEC's NE677M04 is housed in NEC's new low profile/flat lead

style "M04" package

guard pin of capacitance meter.

MAG =

SOT-343 footprint, with a height of only 0.59 mm

Flat lead style for better RF performance

-1dB

= 15 GHz

= 15.5 dB at 1.8 GHz

SYMBOLS

= 15 dBm at 1.8 GHz

MAG

Cre

CBO

EBO

21E

1dB

(

K ±

Collector Cutoff Current at V

Emitter Cutoff Current at V

DC Current

Output Power at 1 dB compression point at V

f = 1.8 GHz, P

Linear Gain at V

Maximum Available Gain

Insertion Power Gain at V

Collector Efficiency at V

Noise Figure at V

Gain Bandwidth at V

Reverse Transfer Capacitance

K - 1

= 1 dBm

NPN SILICON HIGH FREQUENCY

Gain at V

= 1 dBm

PARAMETERS AND CONDITIONS

EIAJ

= 2.8 V, I

= 3 V, I

PACKAGE OUTLINE

REGISTRATION NUMBER

= 3 V, I

PART NUMBER

at V

= 2.8 V, I

= 3 V, I

= 5 mA, f = 2 GHz, Zs =Z

= 1 V, I

= 5V, I

= 8 mA, f = 1.8 GHz, P

at V

= 20 mA, f = 2 GHz

= 3 V, I

NEC's MEDIUM POWER

= 20 mA

= 25°C)

= 20 mA, f = 2 GHz

= 0

= 8 mA, f = 1.8 GHz,

= 3 V, I

= 0

= 20 mA, f = 2 GHz

= 2.8 V, I

= 0, f = 1 MHz

OPT

= -10 dBm

TRANSISTOR

= 8 mA,

California Eastern Laboratories

UNITS

dBm

GHz

PIN CONNECTIONS

1. Emitter

2. Collector

3. Emitter

4. Base

+0.30

10.0

MIN

2.05±0.1

1.25±0.1

NE677M04

2SC5751

M04

TYP

15.0

15.5

16.0

13.5

0.22

120

1.7

MAX

0.50

100

150

2.5

Related parts for NE677M04-A

NE677M04-A Summary of contents

Page 1

... NEC's NE677M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 15 GHz, the NE677M04 is usable in applications from 100 MHz to 3 GHz. The NE677M04 provides P1dB of 15 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications ...

Page 2

... I B 400 µA 500 µA 50 300 µ Collector to Emitter Voltage V 1 ORDERING INFORMATION (T = 25°C) A PART NUMBER UNITS RATINGS NE677M04-T2-A V 9.0 V 6 THERMAL RESISTANCE mW 205 SYMBOLS 150 ° j-a -65 to +150 °C Note: 1. Mounted on a 1.08cm ( °C) A 125 150 (º µ ...

Page 3

... Collector Current I C INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT 2.5 GHz 20 MAG 21e Collector Current °C) A 100 100 (mA) 100 (mA) NE677M04 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG MAG 21e 0.1 1 Frequency f (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 20 ...

Page 4

... NE677M04 TYPICAL PERFORMANCE CURVES OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 3 0.9 GHz (RF OFF out η -20 -15 -10 -5 Input Power P (dBm) in OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 3 1.8 GHz (RF OFF out η -15 - Input Power P ...

Page 5

... ∆ ∆ NE677M04 +0º +0º 1 MAG (dB) 32.34 29.46 27.71 26.40 25.44 24.54 23.81 23.13 22.51 21.95 17.66 15.82 15.33 14.87 13.00 11.64 10.67 9.99 9.71 9.94 9.00 8. ...

Page 6

... NE677M04 TYPICAL SCATTERING PARAMETERS j50 j25 j10 S22 25 50 100 0 10 S11 -j10 -j25 -j50 NE677M04 FREQUENCY S 11 GHz MAG ANG 0.100 0.58 -36.91 0.200 0.53 -67.97 0.300 0.49 -91.49 0.400 0.46 -108.88 0.500 0.44 -121.87 0.600 0.42 -135.00 0.700 0.42 -143 ...

Page 7

... ∆ ∆ Internet: http://WWW.CEL.COM NE677M04 +0º +0º MAG 1 (dB) 36.62 33.32 31.43 30.03 28.75 27.65 26.75 24.98 23.55 22.49 18.69 17.16 16.71 16.30 14.62 13.43 12.75 12.91 11.79 10.78 9.86 8. ...

Page 8

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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