NE68018-A CEL, NE68018-A Datasheet - Page 15

• Manufacturer Part Number: NE68018-A
• Description: TRANSISTOR NPN 2GHZ SOT343
• Manufacturer: CEL

Specifications of NE68018-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 10GHz
• Noise Figure (db Typ @ F): 1.6dB ~ 3dB @ 1GHz ~ 2GHz
• Gain: 10.2dB ~ 14dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 6V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.035 A
• Power Dissipation: 150 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NE68033 NONLINEAR MODEL
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
VJC
IKR
ISC
IRB
IKF
ISE
NF
NE
BR
NR
RE
RB
BF
NC
RC
IS
0.358e-12
0.162e-12
3.84e-16
1.0e-14
4.01e-4
Infinity
Infinity
124.9
0.027
1.05
2.17
1.05
17.9
1.02
10.5
0.71
0.79
11.9
0.6
0.5
Q1
1
0
2
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
ITF
XTI
EG
FC
TF
TR
KF
AF
Base
C
BEPKG
L
0.635e-9
BX
8.7e-12
0.082
0.64
0.75
19.1
1.11
Q1
0.5
18
0
0
0
0
0
3
0
1
L
B
(1)
C
C
CBPKG
CB
Emitter
L
L
E
EX
ADDITIONAL PARAMETERS
UNITS
MODEL RANGE
Frequency:
Bias:
Date:
C
CE
Parameters
Parameter
time
capacitance
inductance
resistance
voltage
current
C
C
L
L
C
C
C
L
L
L
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
C
Q1
CEPKG
L
CX
0.05 to 3.0 GHz
V
7/97
CE
= 2.5 V to 6 V, I
Collector
0.08e-12
0.08e-12
0.65e-9
0.95e-9
0.1e-12
0.1e-12
0.01e-12
0.3e-9
0.5e-9
0.3e-9
seconds
farads
henries
ohms
volts
amps
Units
C
68033
= 0.3 mA to 20 mA