NESG2046M33-A CEL, NESG2046M33-A Datasheet - Page 2

• Manufacturer Part Number: NESG2046M33-A
• Description: TRANS NPN 2GHZ M33
• Manufacturer: CEL

Specifications of NESG2046M33-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 18GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.5dB @ 2GHz
• Gain: 9.5dB ~ 11.5dB
• Power - Max: 130mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 140 @ 2mA, 1V
• Current - Collector (ic) (max): 40mA
• Mounting Type: Surface Mount
• Package / Case: M33
• Continuous Collector Current: 40 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Mounting Style: SMD/SMT
• Power Dissipation: 130 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
h
FE
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Associated Gain
Reverse Transfer Capacitance
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
h
Marking
FE
RANK
CLASSIFICATION
Value
2. Collector to base capacitance when the emitter grounded
PARAMETER
140 to 220
FB
T7
SYMBOL
h
C
|S
FE
re
I
I
NF
CBO
EBO
G
f
21e
Note 2
Note 1
T
a
|
2
(T
V
V
V
V
V
V
Z
V
Z
V
CB
EB
CE
CE
CE
CE
S
CE
S
CB
A
= Z
= Z
= 0.5 V, I
=+25ºC)
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
Sopt
Sopt
TEST CONDITIONS
, Z
, Z
E
C
C
C
C
C
E
L
L
= 0 mA
= 0 mA, f = 1 MHz
C
= 2 mA
= 15 mA, f = 2 GHz
= 15 mA, f = 2 GHz
= 3 mA, f = 2 GHz,
= 3 mA, f = 2 GHz,
= Z
= Z
= 0 mA
Lopt
Lopt
MIN.
140
9.5
15
11
−
−
−
−
TYP.
11.5
180
0.8
0.2
18
13
−
−
MAX.
100
100
220
1.5
0.4
−
−
−
UNIT
GHz
nA
nA
dB
dB
dB
pF
−