NESG2107M33-A CEL, NESG2107M33-A Datasheet - Page 2

• Manufacturer Part Number: NESG2107M33-A
• Description: TRANS NPN 2GHZ M33
• Manufacturer: CEL

Specifications of NESG2107M33-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 10GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.5dB @ 2GHz
• Gain: 7dB ~ 10dB
• Power - Max: 130mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 140 @ 5mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M33
• Continuous Collector Current: 100 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Mounting Style: SMD/SMT
• Power Dissipation: 130 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
h
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Reverse Transfer Capacitance
Noise Figure
Associated Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
FE
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
h
Marking
FE
RANK
CLASSIFICATION
Value
2. Collector to base capacitance when the emitter grounded
PARAMETER
140 to 220
FB
D7
SYMBOL
h
C
|S
|S
FE
re
I
I
NF
G
CBO
EBO
f
f
21e
21e
Note 1
Note 2
T
T
a
|
|
2
2
V
V
V
V
V
Z
V
Z
V
V
V
V
CB
EB
CE
CB
CE
S
CE
S
CE
CE
CE
CE
(T
= Z
= Z
= 0.5 V, I
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
A
=+25ºC)
opt
opt
TEST CONDITIONS
E
C
E
C
C
C
C
C
C
= 0 mA
= 0 mA, f = 1 MHz
= 5 mA
= 5 mA, f = 2 GHz,
= 5 mA, f = 2 GHz,
= 5 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 5 mA, f = 2 GHz
= 20 mA, f = 2 GHz
C
= 0 mA
MIN.
140
7.5
−
−
−
−
7
7
−
−
TYP.
180
0.5
0.9
10
10
20
10
−
−
9
MAX.
100
100
220
0.7
1.5
−
−
−
−
−
UNIT
GHz
GHz
dB
dB
dB
dB
nA
nA
pF
−