UPA806T-A CEL, UPA806T-A Datasheet - Page 8

• Manufacturer Part Number: UPA806T-A
• Description: TRANSISTOR NPN 12GHZ SOT363
• Manufacturer: CEL

Specifications of UPA806T-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 2GHz
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 10mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc Collector/base Gain Hfe Min: 75
• Gain Bandwidth Product Ft: 12 GHz
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.03 A
• Power Dissipation: 0.1 W, 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

BJT NONLINEAR MODEL PARAMETERS
NONLINEAR MODEL
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
ISC
IRB
VJC
IKF
ISE
BR
NR
IKR
NC
RE
RB
RC
BF
NF
NE
IS
Q1 & Q2
0.18e-12
7.9e-13
0.4e-12
Infinity
7e-16
0.009
0.19
2.19
1.08
12.4
8.34
0.81
0.75
109
1.3
0.5
15
10
10
1
1
0
2
Parameters
XCJC
MJC
MJS
CJS
VJS
PTF
XTB
XTF
VTF
EG
FC
ITF
XTI
KF
TF
TR
AF
Q1 & Q2
3e-12
0.34
0.75
4.58
0.01
1e-9
1.11
0.5
5.2
0
0
0
0
0
3
0
1
(1)
UNITS
MODEL RANGE
Frequency:
Bias:
Date:
Parameter
time
capacitance
inductance
resistance
voltage
current
0.1 to 3.0 GHz
V
10/98
CE
=0.5 V to 5 V, I
C
= 1 mA to 10 mA
henries
seconds
ohms
volts
amps
farads
Units