UPA807T-A CEL, UPA807T-A Datasheet

TRANSISTOR NPN 13GHZ SOT363

UPA807T-A

Manufacturer Part Number
UPA807T-A
Description
TRANSISTOR NPN 13GHZ SOT363
Manufacturer
CEL
Datasheet

Specifications of UPA807T-A

Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
3V
Frequency - Transition
13GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2dB @ 2GHz
Power - Max
60mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 7mA, 2V
Current - Collector (ic) (max)
10mA
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.01 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
FEATURES
• SMALL PACKAGE STYLE:
• LOW NOISE FIGURE:
• HIGH GAIN:
• HIGH GAIN BANDWIDTH: f
• LOW CURRENT OPERATION
ELECTRICAL CHARACTERISTICS
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
NEC's UPA807T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
various hand-held wireless applications.
DESCRIPTION
T
SYMBOLS
h
, low voltage bias and small size make this device suited for
FE1
|S
2 NE686 Die in a 2 mm x 1.25 mm package
NF = 1.5 dB TYP at 2 GHz
|S
Cre
I
I
h
CBO
EBO
NF
21E
FE 1
f
21E
/h
T
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use
2
FE2
|
2
|
part number UPA807T-T1, 3K per reel.
2
= 9 dB TYP at 2 GHz
Collector Cutoff Current at V
Emitter Cutoff Current at V
Forward Current Gain at V
Gain Bandwidth at V
Feedback Capacitance at V
Insertion Power Gain at V
Noise Figure at V
h
FE
Ratio:
PARAMETERS AND CONDITIONS
h
h
FE1
FE2
PACKAGE OUTLINE
= Smaller Value of Q
= Larger Value of Q
CE
PART NUMBER
= 2 V, I
T
CE
= 13 GHz
= 2 V, I
CE
EB
CE
CB
C
CB
= 2 V, I
= 3 mA, f = 2 GHz
FREQUENCY TRANSISTOR
= 1 V, I
= 2 V, I
= 2 V, I
C
= 5 V, I
= 7 mA, f = 2 GHz
1
C
C
C
1
or Q
=7 mA, f = 2 GHz
, or Q
E
E
= 0
= 7 mA
= 0, f = 1 MHz
(T
= 0
2
A
2
= 25°C)
NPN SILICON HIGH
UNITS
GHz
µA
µA
dB
dB
pF
PIN OUT
1. Collector Transistor 1
2. Emitter Transistor 1
3. Collector Transistor 2
4. Emitter Transistor 2
5. Base Transistor 2
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
OUTLINE DIMENSIONS
2.0 ± 0.2
0.9 ± 0.1
1.3
0.7
0.65
California Eastern Laboratories
MIN
0.85
7.5
70
10
PACKAGE OUTLINE S06
2
3
1
(Top View)
2.1 ± 0.1
1.25 ± 0.1
0 ~ 0.1
UPA807T
TYP
S06
100
0.4
1.5
13
9
(Units in mm)
UPA807T
6
5
4
0.2 (All Leads)
0.15
MAX
140
0.1
0.1
0.6
2
+0.10
- 0.05

Related parts for UPA807T-A

UPA807T-A Summary of contents

Page 1

... HIGH GAIN BANDWIDTH GHz T • LOW CURRENT OPERATION DESCRIPTION NEC's UPA807T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily config- ured for either dual transistor or cascode operation. The high f ...

Page 2

... UPA807T ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C PT Total Power Dissipation 1 Die 2 Die T Junction Temperature J T Storage Temperature STG Note: 1.Operation in excess of any one of these parameters may result in permanent damage. ...

Page 3

... NOISE FIGURE vs. COLLECTOR CURRENT GHz Collector Current, lc (mA) ORDERING INFORMATION PART NUMBER QUANTITY UPA807T-T1-A 3000 (T = 25˚ PACKAGING Tape & Reel UPA807T INSERTION POWER GAIN vs. COLLECTOR CURRENT Collector Current, lc (mA) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0 MHz 0.6 0.4 0 2.0 4.0 6.0 8 ...

Page 4

... UPA807T TYPICAL SCATTERING PARAMETERS 100 - UPA807T (Q1 FREQUENCY S 11 (GHz) MAG ANG 0.10 0.962 -1.96 0.20 0.958 -8.94 0.40 0.928 -18.56 0.60 0.882 -27.04 0.80 0.827 -35.09 1.00 0.773 -42.12 1.20 0.712 -48.31 1.40 0.659 -53.74 1.60 0.611 -58.52 1.80 0.564 -62.92 2 ...

Page 5

... TYPICAL SCATTERING PARAMETERS 100 - UPA807T (Q2 FREQUENCY S 11 (GHz) MAG ANG 0.10 0.962 -1.62 0.20 0.961 -8.30 0.40 0.935 -17.55 0.60 0.894 -25.92 0.80 0.843 -34.30 1.00 0.792 -42.05 1.20 0.730 -49.34 1.40 0.675 -56.19 1.60 0.624 -62.66 1.80 0.574 -69.02 2.00 ...

Page 6

... UPA807T TYPICAL SCATTERING PARAMETERS 100 - UPA807T (Q1 FREQUENCY S 11 (GHz) MAG ANG 0.10 0.843 -10.23 0.20 0.801 -22.30 0.40 0.671 -41.12 0.60 0.539 -54.78 0.80 0.432 -64.35 1.00 0.352 -71.08 1.20 0.289 -75.50 1.40 0.240 -78.43 1.60 0.202 -80.40 1.80 0.169 -80.85 2 ...

Page 7

... TYPICAL SCATTERING PARAMETERS 100 - UPA807T (Q2 FREQUENCY S 11 (GHz) MAG ANG 0.10 0.845 -9.27 0.20 0.809 -20.93 0.40 0.693 -39.56 0.60 0.565 -54.11 0.80 0.456 -65.39 1.00 0.373 -74.54 1.20 0.305 -82.21 1.40 0.254 -89.32 1.60 0.214 -96.11 1.80 0.182 -103.22 2.00 ...

Page 8

... UPA807T TYPICAL SCATTERING PARAMETERS 100 - UPA807T (Q1 FREQUENCY S 11 (GHz) MAG ANG 0.10 0.963 -1.86 0.20 0.962 -8.32 0.40 0.934 -17.28 0.60 0.892 -25.24 0.80 0.840 -32.80 1.00 0.789 -39.43 1.20 0.732 -45.25 1.40 0.680 -50.38 1.60 0.633 -54.84 1.80 0.587 -58.98 2 ...

Page 9

... TYPICAL SCATTERING PARAMETERS 100 - UPA807T (Q2 FREQUENCY S 11 (GHz) MAG ANG 0.10 0.964 -1.52 0.20 0.964 -7.70 0.40 0.940 -16.26 0.60 0.903 -24.04 0.80 0.856 -31.89 1.00 0.808 -39.13 1.20 0.750 -45.98 1.40 0.697 -52.41 1.60 0.648 -58.51 1.80 0.598 -64.46 2.00 ...

Page 10

... UPA807T TYPICAL SCATTERING PARAMETERS 100 - UPA807T (Q1 FREQUENCY S 11 (GHz) MAG ANG 0.10 0.805 -11.77 0.20 0.754 -24.34 0.40 0.607 -43.28 0.60 0.473 -55.82 0.80 0.372 -63.72 1.00 0.299 -68.64 1.20 0.244 -71.13 1.40 0.201 -71.73 1.60 0.169 -71.23 1.80 0.143 -68.54 2 ...

Page 11

... TYPICAL SCATTERING PARAMETERS 100 - UPA807T (Q2 FREQUENCY S 11 (GHz) MAG ANG 0.10 0.809 -10.62 0.20 0.764 -22.77 0.40 0.630 -41.69 0.60 0.498 -55.31 0.80 0.394 -65.19 1.00 0.315 -72.82 1.20 0.255 -78.94 1.40 0.209 -84.50 1.60 0.173 -89.77 1.80 0.144 -95.21 2.00 ...

Page 12

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

Related keywords