UPA862TD-A CEL, UPA862TD-A Datasheet - Page 5

• Manufacturer Part Number: UPA862TD-A
• Description: TRANSISTOR NPN DUAL TD
• Manufacturer: CEL

Specifications of UPA862TD-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 6V, 5.5V
• Frequency - Transition: 12GHz, 6.5GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 2GHz
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 10mA, 3V / 100 @ 5mA, 1V
• Current - Collector (ic) (max): 30mA, 100mA
• Mounting Type: Surface Mount
• Package / Case: TD
• Dc Collector/base Gain Hfe Min: 150
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (T
(1) Q1
(2) Q2
h
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
FE
h
h
Notes 1. Pulse measurement: PW
FE
FE
Value of Q1
Value of Q2
Marking
CLASSIFICATION
Rank
2. Collector to base capacitance when the emitter grounded
Parameter
Parameter
100 to 145
75 to 150
FB
vY
Symbol
Symbol
h
h
C
C
FE
S
FE
S
S
I
I
I
I
re
re
NF
NF
CBO
EBO
CBO
EBO
f
f
f
21e
21e
21e
T
Note 2
T
T
Note 2
Note 1
Note 1
350 s, Duty Cycle
2
2
2
A
V
V
V
V
V
V
Z
V
V
V
V
V
V
V
V
V
Z
V
= +25 C)
S
S
CB
BE
CE
CE
CE
CE
CB
CB
BE
CE
CE
CE
CE
CE
CE
CB
Data Sheet P15685EJ1V0DS
= Z
= Z
= 5 V, I
= 1 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 0.5 V, I
opt
opt
Test Conditions
C
Test Conditions
C
E
C
C
C
C
E
E
C
C
C
C
C
C
= 0 mA
= 0 mA
= 10 mA
= 10 mA, f = 2 GHz
= 10 mA, f = 2 GHz
= 3 mA, f = 2 GHz,
= 0 mA, f = 1 MHz
= 0 mA
= 0 mA
= 5 mA
= 5 mA, f = 2 GHz
= 15 mA, f = 2 GHz
= 5 mA, f = 2 GHz
= 15 mA, f = 2 GHz
= 10 mA, f = 2 GHz,
E
= 0 mA, f = 1 MHz
2%
MIN.
MIN.
10.0
100
7.0
3.0
5.0
3.0
4.5
75
TYP.
TYP.
12.0
110
120
8.5
1.5
0.4
4.5
6.5
4.0
5.5
1.9
0.6
MAX.
MAX.
100
100
150
600
600
145
2.5
0.7
2.5
0.8
PA862TD
GHz
GHz
GHz
Unit
Unit
nA
nA
dB
dB
pF
nA
nA
dB
dB
dB
pF
3