UPA901TU-A CEL, UPA901TU-A Datasheet - Page 7
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UPA901TU-A
Manufacturer Part Number
UPA901TU-A
Description
TRANSISTOR NPN 5.8GHZ 8-MINI
Manufacturer
CEL
Datasheet
1.UPA901TU-T3-A.pdf
(9 pages)
Specifications of UPA901TU-A
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
4.5V
Power - Max
410mW
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 6mA, 3V / 80 @ 20mA, 3V
Current - Collector (ic) (max)
75mA, 250mA
Mounting Type
Surface Mount
Package / Case
8-MINIMOLD
Dc Collector/base Gain Hfe Min
80
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.075 A
Power Dissipation
0.410 W
Maximum Operating Temperature
+ 85 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Frequency - Transition
-
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
TYPICAL CHARACTERISTICS
Remark The graphs indicate nominal characteristics.
OUTPUT POWER, TOTAL CURRENT,
TOTAL POWER EFFICIENCY vs. INPUT POWER
25
20
15
10
24
22
20
18
16
14
12
10
5
-15
-10
OUTPUT POWER, TOTAL CURRENT,
vs. INPUT POWER
η
total
-8
f = 5.725 GHz
=
5.800 GHz
5.850 GHz
V
CE
-10
-6
P
Input Power P
Input Power P
out
x I
P
total
-4
out
P
I
total
x 100 (%)
out
-2
-5
η
I
total
in
total
in
0
(dBm)
(dBm)
2
0
(T
A
4
= +25°C , V
6
5
200
150
100
50
0
280
240
200
160
120
80
40
0
CE
= 3.6 V, R
24
22
20
18
16
14
12
10
15
10
BIAS CIRCUIT CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
BIAS
5
0
-10
0
OUTPUT POWER, TOTAL CURRENT,
vs. INPUT POWER
=
680 Ω, f = 5.8 GHz, unless otherwise specified)
-8
Collector to Emitter Voltage V
1
-6
Input Power P
-4
P
2
out
-2
I
total
in
0
3
(dBm)
R
2
BIAS
CE
V
4
CE
= 300 Ω
(V)
4
1000 Ω
2000 Ω
680 Ω
= 4.2 V
3.8 V
3.6 V
3.3 V
2.8 V
4.2 V
3.8 V
3.6 V
3.3 V
2.8 V
6
5
280
240
200
160
120
80
40
0