MRF581G Microsemi Power Products Group, MRF581G Datasheet

TRANS NPN 18V 200MA MACRO X

MRF581G

Manufacturer Part Number
MRF581G
Description
TRANS NPN 18V 200MA MACRO X
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of MRF581G

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
3dB ~ 3.5dB @ 500MHz
Gain
13dB ~ 15.5dB
Power - Max
1.25W
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 50mA, 5V
Current - Collector (ic) (max)
200mA
Mounting Type
Surface Mount
Package / Case
Micro-X ceramic (84C)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MRF581GMI
MRF581GMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF581G
Manufacturer:
MOTOROLA
Quantity:
2 404
Part Number:
MRF581GT
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Revision A- December 2008
Features
DESCRIPTION:
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
Thermal Data
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Low Noise - 2.5 dB @ 500 MHZ
Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
Ftau - 5.0 GHz @ 10v, 75mA
Cost Effective MacroX Package
Symbol
T
Tstg
V
V
V
P
P
Jmax
CEO
CBO
EBO
I
C
D
D
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
Total Device Dissipation @ TC = 50ºC
Derate above 50ºC
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
Storage Junction Temperature Range
Maximum Junction Temperature
Visit our website at www.microsemi.com or contact our factory direct.
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Parameter
°
C)
*G Denotes RoHS Compliant, Pb free Terminal Finish
MRF581
MRF581G
MRF581A
MRF581AG
MRF581
18
-65 to +150
1.25
150
2.5
200
25
10
2.5
30
MRF581A
Macro X
15
mW/ ºC
mW/ ºC
Watts
Watts
Unit
Vdc
Vdc
Vdc
ºC
ºC
mA

Related parts for MRF581G

MRF581G Summary of contents

Page 1

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. ° C) Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish Macro X MRF581 MRF581A Unit ...

Page 2

... VCE = 10 Vdc 1.0 GHz) Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. ° C) Test Conditions MRF581 MRF581A MRF581 MRF581A Test Conditions MRF581 MRF581G MRF581A MRF581AG Value Min. Typ. Max ...

Page 3

... Visit our website at www.microsemi.com or contact our factory direct. Test Conditions S21 ∠ φ |S21| 23.8 116 13.2 98 9.0 89 6.8 83 5.5 77 4.6 72 4.0 68 3.5 64 3.1 60 2.8 56 MRF581 MRF581G MRF581A MRF581AG Value Min. Typ. Max. - 3.0 3.5 13 15 S12 ∠ φ |S12| |S22| .026 46 ...

Page 4

... Figure 1. Minimum Noise Figure and Gain @ Minimum Noise Figure. Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. MRF581 MRF581G MRF581A MRF581AG C2, C3 — 1.0–10 pF, Johanson Capacitor R1 — 1.0 kΩ Res. ...

Page 5

... MACRO X 0.5 9.5 65 12.5 16 150 MACRO 12.5 16 200 MACRO T 1 12.5 16 400 TO-39 1 12.5 16 400 TO- Power MRF581 MRF581G MRF581A MRF581AG 2N5109 NPN 200 1200 3.5 MRF5943C NPN 200 3 11.4 1000 MRF5943, R1, R2 NPN 200 3 1300 2N5179 NPN 200 4.5 1 900 ...

Page 6

... PIN 1. COLLECTOR 2. EMITTER 3. BASE 4. EMITTER Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct MRF581 MRF581G MRF581A MRF581AG ...

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