MRF559G Microsemi Power Products Group, MRF559G Datasheet - Page 3

• Manufacturer Part Number: MRF559G
• Description: TRANS NPN 16V 150MA MACRO X
• Manufacturer: Microsemi Power Products Group

Specifications of MRF559G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 16V
• Gain: 8dB ~ 9.5dB
• Power - Max: 2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 50mA, 10V
• Current - Collector (ic) (max): 150mA
• Mounting Type: Surface Mount
• Package / Case: Micro-X ceramic (84C)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Noise Figure (db Typ @ F): -
• Other names: MRF559GMI; MRF559GMI

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Typical Performance @ VCC = 7.5V
FUNCTIONAL
Symbol
G
G
PE
PE
Power Gain
Collector Efficiency
Power Gain
Collector Efficiency
C1, C2, C4, C5 — 1.0–10 pF Johanson
C7 — 1.0 F Tantalum
L2, L3 — Ferrite Bead
Z2 — 30
Z4 — 50
Microstrip Elements — r = 2.55
2.5 cm
1.2 cm
Test Circuit-Figure 1
Pout = 0.5 W, VCE =12.5Vdc
MHz
MHz
Test Circuit-Figure 1
Pout = 0.5 W, VCE =12.5Vdc
MHz
MHz
Test Circuit-Figure 1
Pout = 0.5 W, VCE =7.5Vdc
MHz
Test Circuit-Figure 1
Pout = 0.5 W, VCE =7.5Vdc
MHz
Figure 2. 870 MHz Test Fixture
Test Conditions
f = 870 MHz
f = 870 MHz
f = 870
f = 870
f = 512
f = 512
f = 512
f = 512
L1, L4 — 4 Turns #26 AWG, 0.3 cm ID, 0.4 cm Long
Z1 — 50
Z3 — 50
Z5, Z6 — 50
C3, C6 — 0.001 F Chip Capacitor
1.5 cm
2.0 cm
1.25 cm
Min.
8.0
50
-
-
-
-
-
-
MRF559G
MRF559
Value
Typ.
9.5
6.5
13
65
60
10
70
65
Max.
Rev A 9/2005
-
-
-
-
-
-
Unit
dB
dB
%
%