AT-42070 Avago Technologies US Inc., AT-42070 Datasheet - Page 2

• Manufacturer Part Number: AT-42070
• Description: TRANS NPN BIPO 12V 80MA 70-SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-42070

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3dB @ 2GHz ~ 4GHz
• Gain: 10.5dB ~ 14dB
• Power - Max: 600mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 35mA, 8V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (70 mil)
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 8GHz
• Power Dissipation Pd: 600mW
• Dc Collector Current: 80mA
• Dc Current Gain Hfe: 150
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note:
1. For this test, the emitter is grounded.
AT-42070 Absolute Maximum Ratings
Electrical Specifications, T

Symbol
Symbol
|S
P
G
NF
G
f
h
I
I
C
CBO
EBO
T
CB
1 dB
1 dB
A
FE
V
V
V
T
1E
O
CBO
P
EBO
CEO
I
T
STG
C
T
j
|

Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Insertion Power Gain; V
Power Output @ 1 dB Gain Compression
V
1 dB Compressed Gain; V
Optimum Noise Figure: V
Gain @ NF
Gain Bandwidth Product: V
Forward Current Transfer Ratio; V
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
Parameters and Test Conditions
CE
= 8 V, I
O
A
C
; V
= 35 mA
= 25°C
CE
= 8 V, I
[,3]
CE
C
EB
CE
CE
= 10 mA
= 8 V, I
CB
[1]
= 1 V
= 8 V, I
CE
= 8 V, I
= 8 V
: V
= 8 V, I
CB
C
CE
= 8 V, f = 1 MHz
C
= 35 mA
C
= 8 V, I
= 35 mA
= 10 mA
[1]
C
= 35 mA
C
= 35 mA
Units
mW
mA
°C
°C
V
V
V
Maximum
-65 to 00
Absolute
600
00
1.5
f = .0 GHz
f = 4.0 GHz
f = .0 GHz
f= 4.0 GHz
f = .0 GHz
f = 4.0 GHz
f = .0 GHz
f = 4.0 GHz
f = .0 GHz
f = 4.0 GHz
0
1
80
[1]
Thermal Resistance
Notes:
1. Permanent damage may occur if any of
2. Tcase = 25°C.
3. Derate at 6.7 mW/°C for Tc > 110°C.
4. The small spot size of this technique
θ
jc
= 150°C/W
these limits are exceeded.
results in a higher, though more accurate
determination of θjc than do alternate
methods. See MEASUREMENTS section
“Thermal Resistance” for more information.
Units
dBm
GHz
—
dB
dB
dB
dB
µA
µA
pF
10.5
Min.
30
[2,4]
:
11.5
1.0
0.5
15.0
10.0
14.0
10.5
0.8
Typ.
150
5.5
1.9
3.0
8.0
Max.
70
0.
.0