MMBTH10LT3G ON Semiconductor, MMBTH10LT3G Datasheet - Page 3

• Manufacturer Part Number: MMBTH10LT3G
• Description: TRANS VHF/UHF NPN 25V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBTH10LT3G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector (ic) (max): -
• Gain: -
• Noise Figure (db Typ @ F): -

- 10
- 20
- 30
80
70
60
50
40
30
20
70
60
50
40
30
20
10
10
0
0
100
100
Figure 1. Rectangular Form
Figure 3. Rectangular Form
200
200
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
- b
- g
g
ib
ib
fb
300
300
COMMON−BASE y PARAMETERS versus FREQUENCY
400
400
y
(V
fb
500
500
, FORWARD TRANSFER ADMITTANCE
CB
b
fb
TYPICAL CHARACTERISTICS
= 10 Vdc, I
y
ib
700
700
, INPUT ADMITTANCE
http://onsemi.com
C
1000
1000
= 4.0 mAdc, T
3
- 10
- 20
- 30
- 40
- 50
- 60
60
50
40
30
20
10
0
70
0
1000 MHz
100
A
60
= 25°C)
10
200
50
20
700
Figure 2. Polar Form
Figure 4. Polar Form
40
30
30
400
g
g
ib
fb
(mmhos)
(mmhos)
20
40
400
10
50
600
0
700
60
- 10
200
1000 MHz
70
- 20 - 30
100
80