NE68719-T1 CEL, NE68719-T1 Datasheet - Page 18
![TRANS NPN 2GHZ SMD](/photos/5/65/56510/51-sc-90_sml.jpg)
NE68719-T1
Manufacturer Part Number
NE68719-T1
Description
TRANS NPN 2GHZ SMD
Manufacturer
CEL
Datasheet
1.NE68730-T1.pdf
(20 pages)
Specifications of NE68719-T1
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3V
Frequency - Transition
11GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2dB @ 2GHz
Power - Max
90mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 20mA, 2V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
Surface Mount
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gain
-
Other names
2SC5186
NE68719-T1TR
NE68719-TR
NE68719TR
NE68719-T1TR
NE68719-TR
NE68719TR
18
SiGe and SiGe:C Low Noise Amplifiers
UPC8211TK
UPC8231TK
UPC8233TK
Notes: 1. SiGe device 2. 0.8 to 3.0 GHz 3. SiGe:C device 4. Under development, please inquire
SiGe BiCMOS Wideband LNA with Bypass
Notes: 1. Under development, please inquire
AGC Amplifiers with Video Output
Notes: 1. f
Variable Gain Amplifiers
Notes: 1. f = 2.5 MHz, 50W in and out, -20 dBm input power
UPC3217GV
UPC3218GV
UPC3219GV
UPC3221GV
UPC3231GV
UPC3234GV
UPC8204TK
UPD5740T6N
UPC8215TU
UPC8230TU
UPC8232T5N
UPC8236T6N
UPC8240T6N
UPC8244T6N
UPD5750
Number
Number
Number
Silicon RFICs: Low Noise, AGC & Variable Gain Amplifiers
Number
Part
Part
Part
Part
IN
= 45 MHz, Z
1
1
1
1
1
1
1
1
1
1
3
3
3
3
3
3
3,4
@ 3 dB Down
@ 3 dB Down
Bypass
Bypass
Frequency
Frequency
800 – 2500
Mode
LNA
LNA
Typical
Typical
Frequency V
Range
Range
(MHz)
(MHz)
S
100
100
100
100
100
Typical
90
1.575
1.575
1.575
= 50W, Z
(GHz)
1.575
1.575
1.575
1.575
1.575
3.0
2
2
2
2
@ 3 dB Down
L
Frequency
= 250W 2. Output Voltage swing into R
Typical
Range
V
V
1.8
1.8
(V)
(MHz)
(V)
(V)
3
3
3
3
3
3
3
3
5
5
5
5
5
5
CC
CC
CC
770
770
770
770
MIN
MIN TYP MAX TYP
4.5
MIN TYP MAX TYP
—
—
—
—
—
—
—
8.5 11.5
3
15
15
28
26
28
—
ELECTRICAL CHARACTERISTICS (T
ELECTRICAL CHARACTERISTICS (T
(mA)
(mA)
28.5 38
I
(mA)
TYP
10.0
I
V
23
23
35
33
36
CC
3.5
6.0
3.5
3.0
3.5
6.5
6.5
6.5
2.8
1.8
CC
I
(V)
CC
CC
ELECTRICAL CHARACTERISTICS (T
2. At Maximum Gain
34
34
42
41
44
15
MAX
(mA)
TYP
13.0
10.0
1µA
1µA
4.5
9.0
I
5.0
CC
3
–
–
–
–
–
ELECTRICAL CHARACTERISTICS
(dB)
6.5
3.5
4.2
5.0
4.0
NF
(dB)
NF
7.5
9
(dB)
TYP
0.85
0.80
0.95
0.95
(dB)
TYP
NF
1.5
1.4
1.3
1.3
0.8
1.0
0.9
—
—
NF
L
MIN
= 250W, V
4.5 63
TYP
10 63
10 60
-26 +14
0
0
4
MIN
11.5
- 2.0
Gain
(dB)
—
MIN
15.5
24.0
24.5
14.0
Gain
(dB)
—
—
—
—
—
53
42
65
MAX
MAX
OUT
Gain
TYP MAX
13.5
13.0
(dB)
-1.3
-1.5
= 1.0 V
Gain
TYP
18.5
27.0
18.5
20.0
17.0
20.0
19.5
18.5
(dB)
A
A
28
= 25˚C)
= 25˚C)
RL
15.5
(dB)
TYP
RL
(dB)
TYP
N/A
N/A
N/A
N/A
N/A
N/A
p-p
13
—
—
IN
MAX
IN
21.5
30.0
31
20
—
—
—
—
—
3. Digital output path indicated. Gain (max) for separte analog path = 28dB
A
RL
(dB)
TYP
17.0
= 25˚C)
1
10
—
—
RL
(T
RL
(dB)
TYP
IN
(dB)
TYP
N/A
N/A
N/A
N/A
N/A
N/A
—
A
-7.5
-7.0
RL
(dB)
TYP
-16
-13
-14
-16
-11
OUT
8.5
—
= 25°C)
OUT
IN
RL
(dB)
TYP
17.0
11
—
8
OUT
RL
-14.0
14.5
(dB)
TYP
-15
-14
-16
-16
-14
V
17
—
V
TYP
(p–p)
TYP
OUT
(V)
+5
OUT
OUT
1.0
1.0
1.0
1.0
1.0
1.0
Input
P
(dB)
TYP
-5.0
2
-11
2
+8
1dB
8
(dBm)
-22.5
Input
P
TYP
-24
- 22
-17
-22
-22
-23
-18
—
1dB
AGC
AGC
(dB)
TYP
58.5
(dB)
TYP
53
53
42
50
61
40
Input
(dB)
TYP
+30
+30
IP
+2
- 8
3
ISOL
TYP
(dB)
32
40
36
39
55
—
—
—
—
Package
S08 / GV
S08 / GV
S08 / GV
S08 / GV
S08 / GV
S08 / GV
Package
Package
Ball Grid
Code
Code
Code
TK
T6N
Package
T5N
T6N
T6N
T6N
Code
TK
TU
TU
TK
TK
8 pin SSOP
recessed lead
8 pin SSOP
8 pin SSOP
8 pin SSOP
8 pin SSOP
8 pin SSOP
8 pin SSOP
Package
WL-BGA
Package
Package
Style
Style
Style
6 pin
6 pin Recessed Lead
8 pin Recessed Lead
8 pin Recessed Lead
6 pin Recessed Lead
6 pin Recessed Lead
6 pin Leadless
6 pin Leadless
6 pin Leadless
6 pin Leadless
Package
Style