MAX2602ESA+ Maxim Integrated Products, MAX2602ESA+ Datasheet - Page 2
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MAX2602ESA+
Manufacturer Part Number
MAX2602ESA+
Description
TRANS RF NPN 900MHZ 15V 8SOIC
Manufacturer
Maxim Integrated Products
Datasheet
1.MAX2601ESAT.pdf
(6 pages)
Specifications of MAX2602ESA+
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1GHz
Noise Figure (db Typ @ F)
3.3dB @ 836MHz
Gain
11.6dB
Power - Max
6.4W
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 250mA, 3V
Current - Collector (ic) (max)
1.2A
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
3.6V, 1W RF Power Transistors
for 900MHz Applications
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage, Shorted Base (V
Emitter Base Reverse Voltage (V
BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V
Average Collector Current (I
Continuous Power Dissipation (T
DC ELECTRICAL CHARACTERISTICS
(T
AC ELECTRICAL CHARACTERISTICS
(Test Circuit of Figure 1, V
erwise noted.)
Note 1: Backside slug must be properly soldered to ground plane (see Slug Layout Techniques section).
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 2: Guaranteed by design.
Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc; b) no parametric
2
Collector-Emitter Breakdown
Voltage
Collector-Emitter Sustaining
Voltage
Collector-Base Breakdown
Voltage
DC Current Gain
Collector Cutoff Current
Output Capacitance
Frequency Range
Base Current
Harmonics
Power Gain
Collector Efficiency
Stability under Continuous
Load Mismatch Conditions
Two-Tone IMR
Noise Figure
A
SOIC (derate 80mW/°C above +70°C) (Note 1) .............6.4W
= T
_______________________________________________________________________________________
MIN
degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation
capability is observed.
PARAMETER
PARAMETER
to T
MAX
, unless otherwise noted.)
CC
C
)........................................1200mA
= 3.6V, V
EBO
A
= +70°C)
SYMBOL
SYMBOL
)...................................2.3V
2fo, 3fo
BV
BV
LV
BV
V
I
C
h
IM3
IM5
CES
NF
BB
SWR
I
CEO
CBO
η
CEO
FE
OB
CES
f
B
= 0.750V, Z
CES
) ....................17V
I
I
I
I
V
V
(Note 2)
V
V
P
No modulation
V
P
f2 = 836MHz
V
C
C
C
C
CE
CB
CC
CC
OUT
CC
OUT
BB
< 100µA
= 200mA
< 100µA, emitter open
= 250mA, V
= 6V, V
= 0.9V
= 3V, I
= 3.6V, P
= 3.0V, P
= 5.5V, all angles (Note 3)
= 30dBm
= +30dBm total power, f1 = 835MHz,
LOAD
E
BE
= Z
= 0mA, f = 1MHz
OUT
OUT
CE
= 0V
CONDITIONS
SOURCE
CONDITIONS
= 3V
= 30dBm
= 29dBm
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +165°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
Open base
Shorted base
= 50Ω, P
OUT
= 30dBm, f = 836MHz, T
MIN
MIN
100
5.0
DC
15
15
15
0.05
TYP
TYP
11.6
9.6
4.2
-43
-42
8:1
-16
-25
3.3
58
A
= +25°C, unless oth-
MAX
MAX
1.5
1
UNITS
UNITS
GHz
dBc
dBc
dBc
mA
µA
dB
dB
pF
%
V
V
V