BF494_D27Z Fairchild Semiconductor, BF494_D27Z Datasheet
BF494_D27Z
Manufacturer Part Number
BF494_D27Z
Description
TRANSISTOR RF NPN 20V TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.BF494.pdf
(3 pages)
Specifications of BF494_D27Z
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
20V
Power - Max
350mW
Dc Current Gain (hfe) (min) @ Ic, Vce
67 @ 1mA, 10V
Current - Collector (ic) (max)
30mA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Frequency - Transition
-
Noise Figure (db Typ @ F)
-
©2006 Fairchild Semiconductor Corporation
BF494 Rev. A
BF494
NPN RF Transistor
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Electrical Characteristics*
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
V
V
V
I
T
T
P
R
R
V
V
V
I
h
V
V
V
C
CES
J
STG
FE
CEO
CBO
EBO
D
(BR)CEO
(BR)CBO
(BR)EBO
CE
BE
BE
Symbol
Symbol
θJC
θJA
Symbol
(sat)
(ON)
(sat)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Junction Temperature
Storage Temperature Range
Total Device Dissipation, by R
Derate above 25°C
Thermal Resistance, Junction to case
Thermal Resistance, Junction to Ambient
Collector-Emitter Breakdown Voltage
Collector-Base BreakdownVoltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Parameter
Parameter
Parameter
T
C
θJA
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
I
I
I
V
V
I
I
V
C
C
E
C
C
CE
CE
CE
= 1.0mA, I
= 10mA, I
= 10mA, I
= 10µA, I
= 10µA, I
= 40V, V
= 10V, I
= 10V, I
Conditions
1
E
C
B
B
C
C
B
EB
= 0
= 0
= 5mA
= 5mA
= 10mA
= 1mA
= 0
= 0V
Min.
650
5.0
20
30
67
1. Collector 2. Emitter 3. Base
- 55 ~ 150
Value
Value
150
350
125
357
5.0
2.8
20
30
30
Max.
0.92
222
740
0.2
10
TO-92
www.fairchildsemi.com
July 2006
Units
mW/°C
Unit
Unit
°C/W
°C/W
mW
mV
mA
nA
°C
°C
V
V
V
V
V
V
V
V
tm
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BF494_D27Z Summary of contents
Page 1
... Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE V (ON) Base-Emitter On Voltage Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation BF494 Rev 25°C unless otherwise noted a Parameter Parameter θ 25°C unless otherwise noted C Conditions ...
Page 2
Package Dimensions ±0.10 0.46 1.27TYP ±0.20 [1.27 BF494 Rev. A TO-92 +0.25 4.58 –0.15 1.27TYP ±0.20 ] [1.27 ] 3.60 ±0.20 (R2.29) 2 +0.10 0.38 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...